X-On Electronics has gained recognition as a prominent supplier of SI2319CDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2319CDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2319CDS-T1-GE3 Vishay

SI2319CDS-T1-GE3 electronic component of Vishay
SI2319CDS-T1-GE3 Vishay
SI2319CDS-T1-GE3 MOSFETs
SI2319CDS-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI2319CDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -40V Vds 20V Vgs SOT-23
Datasheet: SI2319CDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6588 ea
Line Total: USD 0.66 
Availability - 54463
Ship by Wed. 14 May to Mon. 19 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
54463
Ship by Wed. 14 May to Mon. 19 May
MOQ : 1
Multiples : 1
1 : USD 0.6588
10 : USD 0.5236
30 : USD 0.4658
100 : USD 0.265
600 : USD 0.2168
1200 : USD 0.2037

5261
Ship by Mon. 05 May to Wed. 07 May
MOQ : 1
Multiples : 1
1 : USD 0.952
10 : USD 0.672
50 : USD 0.3724
138 : USD 0.3528
500 : USD 0.3416

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the SI2319CDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2319CDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si2319CDS Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition TrenchFET Power MOSFET 0.077 at V = - 10 V - 4.4 GS - 40 7 nC 100 % R Tested g 0.108 at V = - 4.5 V - 3.7 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC Converter TO-236 (SOT-23) S G 1 3 D G S 2 Top View Si2319CDS (P7)* D * Marking Code P-Channel MOSFET Ordering Information: Si2319CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 40 DS V Gate-Source Voltage V 20 GS T = 25 C - 4.4 C T = 70 C - 3.5 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 3.1 A b, c T = 70 C A - 2.5 A Pulsed Drain Current I - 20 DM T = 25 C - 2.1 C Continous Source-Drain Diode Current I S b, c T = 25 C - 1 A T = 25 C 2.5 C T = 70 C 1.6 C Maximum Power Dissipation P W D b, c T = 25 C 1.25 A b, c T = 70 C 0.8 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d Maximum Junction-to-Ambient t 5 s R 75 100 thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 40 50 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 C/W. Document Number: 66709 www.vishay.com S10-1286-Rev. A, 31-May-10 1Si2319CDS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 40 V DS GS D V /T V Temperature Coefficient - 40 DS J DS I = - 250 A mV/C D V /T V Temperature Coefficient 4.8 GS(th) J GS(th) V V = V , I = - 250 A Gate-Source Threshold Voltage - 1.2 - 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 40 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 40 V, V = 0 V, T = 55 C - 5 DS GS J a On-State Drain Current I V - 5 V, V = - 10 V - 20 A D(on) DS GS V = - 10 V, I = - 3.1 A 0.064 0.077 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 2.6 A 0.090 0.108 GS D a g V = - 15 V, I = - 3.1 A Forward Transconductance 10 S fs DS D b Dynamic Input Capacitance C 595 iss C V = - 20 V, V = 0 V, f = 1 MHz Output Capacitance 76 pF oss DS GS Reverse Transfer Capacitance C 61 rss V = - 20 V, V = - 10 V, I = - 3.1 A 13.6 21 DS GS D Q Total Gate Charge g 711 nC Gate-Source Charge Q 2.5 V = - 20 V, V = - 4.5 V, I = - 3.1 A gs DS GS D Q Gate-Drain Charge 3.2 gd Gate Resistance R f = 1 MHz 0.8 4.3 8.6 g t Turn-On Delay Time 40 60 d(on) t Rise Time V = - 20 V, R = 8 27 41 r DD L I - 2.5 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 18 27 d(off) t Fall Time 10 20 f ns t Turn-On Delay Time 816 d(on) t Rise Time V = - 20 V, R = 8 918 r DD L I - 2.5 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 20 30 d(off) t Fall Time 816 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 2.1 S C A I Pulse Diode Forward Current - 20 SM Body Diode Voltage V I = - 2.5 A, V = 0 V - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 17 26 ns rr Body Diode Reverse Recovery Charge Q 918 nC rr I = - 2.5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 10 a ns Reverse Recovery Rise Time t 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 66709 2 S10-1286-Rev. A, 31-May-10

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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