X-On Electronics has gained recognition as a prominent supplier of SI2318CDS-T1-GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SI2318CDS-T1-GE3 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SI2318CDS-T1-GE3 Vishay

SI2318CDS-T1-GE3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.SI2318CDS-T1-GE3
Manufacturer: Vishay
Category: MOSFET
Description: MOSFET 40V Vds 20V Vgs SOT-23
Datasheet: SI2318CDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1401 ea
Line Total: USD 0.7

Availability - 25015
Ship by Fri. 16 Aug to Wed. 21 Aug
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
200790
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.1022
9000 : USD 0.1022
12000 : USD 0.1022
30000 : USD 0.1022
45000 : USD 0.1022

23312
Ship by Fri. 16 Aug to Wed. 21 Aug
MOQ : 5
Multiples : 5
5 : USD 0.1401
50 : USD 0.1153
150 : USD 0.1029
500 : USD 0.0936
3000 : USD 0.0748
6000 : USD 0.071

129105
Ship by Thu. 15 Aug to Mon. 19 Aug
MOQ : 1
Multiples : 1
1 : USD 0.4278
10 : USD 0.3289
100 : USD 0.1863
1000 : USD 0.1346
3000 : USD 0.1196
9000 : USD 0.1127
24000 : USD 0.1127
45000 : USD 0.1104
99000 : USD 0.107

4442
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 1
Multiples : 1
1 : USD 0.52
5 : USD 0.416
50 : USD 0.2743
90 : USD 0.1833
247 : USD 0.1729

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the SI2318CDS-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2318CDS-T1-GE3 and other electronic components in the MOSFET category and beyond.

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The SI2318CDS-T1-GE3 is a surface mount dual N-channel MOSFET transistor manufactured by Vishay. It features a 40V drain-to-source voltage (Vds) and 20V gate-to-source voltage (Vgs) rating when mounted in a SOT-23 surface mount package. This MOSFET transistor is ideal for switching and load-handling applications, as well as for low-voltage signal amplification and voltage level shifting. The SI2318CDS-T1-GE3 is a robust and reliable transistor that can be used in a variety of applications and is capable of delivering high power with low gate charge.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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