X-On Electronics has gained recognition as a prominent supplier of SI2318CDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2318CDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2318CDS-T1-GE3 Vishay

SI2318CDS-T1-GE3 electronic component of Vishay
SI2318CDS-T1-GE3 Vishay
SI2318CDS-T1-GE3 MOSFETs
SI2318CDS-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI2318CDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 40V Vds 20V Vgs SOT-23
Datasheet: SI2318CDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.185 ea
Line Total: USD 0.92 
Availability - 109319
Ship by Thu. 01 May to Tue. 06 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
8730
Ship by Thu. 24 Apr to Wed. 30 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.1945

133860
Ship by Thu. 24 Apr to Wed. 30 Apr
MOQ : 5302
Multiples : 3000
5302 : USD 0.1226
6000 : USD 0.1207
12000 : USD 0.1187
15000 : USD 0.118
45000 : USD 0.1141

109319
Ship by Thu. 01 May to Tue. 06 May
MOQ : 5
Multiples : 5
5 : USD 0.185
50 : USD 0.1514
150 : USD 0.115
500 : USD 0.0926
3000 : USD 0.0778
6000 : USD 0.0752

105856
Ship by Tue. 22 Apr to Thu. 24 Apr
MOQ : 1
Multiples : 1
1 : USD 0.4862
10 : USD 0.2925
100 : USD 0.1824
500 : USD 0.1617
1000 : USD 0.1474
3000 : USD 0.1078
6000 : USD 0.1078
9000 : USD 0.1023

3409
Ship by Tue. 22 Apr to Thu. 24 Apr
MOQ : 1
Multiples : 1
1 : USD 0.644
10 : USD 0.4144
50 : USD 0.3094
90 : USD 0.2086
247 : USD 0.1974

93120
Ship by Thu. 24 Apr to Wed. 30 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.1904
48000 : USD 0.174
72000 : USD 0.1619
96000 : USD 0.1526

5820
Ship by Thu. 24 Apr to Wed. 30 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.1945

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif
 
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We are delighted to provide the SI2318CDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2318CDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI2318CDS-T1-GE3 is a surface mount dual N-channel MOSFET transistor manufactured by Vishay. It features a 40V drain-to-source voltage (Vds) and 20V gate-to-source voltage (Vgs) rating when mounted in a SOT-23 surface mount package. This MOSFET transistor is ideal for switching and load-handling applications, as well as for low-voltage signal amplification and voltage level shifting. The SI2318CDS-T1-GE3 is a robust and reliable transistor that can be used in a variety of applications and is capable of delivering high power with low gate charge.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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