X-On Electronics has gained recognition as a prominent supplier of SI2318CDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2318CDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2318CDS-T1-GE3 Vishay

SI2318CDS-T1-GE3 electronic component of Vishay
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Part No.SI2318CDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 40V Vds 20V Vgs SOT-23
Datasheet: SI2318CDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1266 ea
Line Total: USD 0.63 
Availability - 69318
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
8730
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1231
9000 : USD 0.1191

148410
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1097
6000 : USD 0.1079
12000 : USD 0.1061
15000 : USD 0.1055
45000 : USD 0.1022

69318
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 5
Multiples : 5
5 : USD 0.1266
50 : USD 0.1052
150 : USD 0.0942
500 : USD 0.085
3000 : USD 0.0709
6000 : USD 0.0687

162646
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5016
10 : USD 0.3047
100 : USD 0.165
1000 : USD 0.1496
3000 : USD 0.1089
9000 : USD 0.1078
24000 : USD 0.1067
45000 : USD 0.1045
99000 : USD 0.1012

5337
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.504
10 : USD 0.4382
50 : USD 0.3052
91 : USD 0.1896
248 : USD 0.1793
500 : USD 0.1722

11640
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1192
9000 : USD 0.1153

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the SI2318CDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2318CDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI2318CDS-T1-GE3 is a surface mount dual N-channel MOSFET transistor manufactured by Vishay. It features a 40V drain-to-source voltage (Vds) and 20V gate-to-source voltage (Vgs) rating when mounted in a SOT-23 surface mount package. This MOSFET transistor is ideal for switching and load-handling applications, as well as for low-voltage signal amplification and voltage level shifting. The SI2318CDS-T1-GE3 is a robust and reliable transistor that can be used in a variety of applications and is capable of delivering high power with low gate charge.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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