X-On Electronics has gained recognition as a prominent supplier of SI2318CDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2318CDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2318CDS-T1-GE3 Vishay

SI2318CDS-T1-GE3 electronic component of Vishay
SI2318CDS-T1-GE3 Vishay
SI2318CDS-T1-GE3 MOSFETs
SI2318CDS-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI2318CDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 40V Vds 20V Vgs SOT-23
Datasheet: SI2318CDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1956 ea
Line Total: USD 0.98 
Availability - 46807
Ship by Wed. 05 Feb to Mon. 10 Feb
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
8730
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1191

133860
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1152
6000 : USD 0.1089
12000 : USD 0.1071
15000 : USD 0.1065
45000 : USD 0.1032

46807
Ship by Wed. 05 Feb to Mon. 10 Feb
MOQ : 5
Multiples : 5
5 : USD 0.1956
50 : USD 0.1582
150 : USD 0.1196
500 : USD 0.0967
3000 : USD 0.0771
6000 : USD 0.0728

139259
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ : 1
Multiples : 1
1 : USD 0.475
10 : USD 0.31
100 : USD 0.18
1000 : USD 0.1375
3000 : USD 0.1111
9000 : USD 0.1078
24000 : USD 0.1056
45000 : USD 0.1045
99000 : USD 0.1023

4462
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ : 1
Multiples : 1
1 : USD 0.504
10 : USD 0.4354
50 : USD 0.3024
90 : USD 0.189
247 : USD 0.1778

101850
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1793
54000 : USD 0.1639
81000 : USD 0.1525

8730
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1193
9000 : USD 0.1191

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the SI2318CDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2318CDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI2318CDS-T1-GE3 is a surface mount dual N-channel MOSFET transistor manufactured by Vishay. It features a 40V drain-to-source voltage (Vds) and 20V gate-to-source voltage (Vgs) rating when mounted in a SOT-23 surface mount package. This MOSFET transistor is ideal for switching and load-handling applications, as well as for low-voltage signal amplification and voltage level shifting. The SI2318CDS-T1-GE3 is a robust and reliable transistor that can be used in a variety of applications and is capable of delivering high power with low gate charge.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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