X-On Electronics has gained recognition as a prominent supplier of SI2319DS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2319DS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2319DS-T1-GE3 Vishay

SI2319DS-T1-GE3 electronic component of Vishay
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Part No.SI2319DS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 40V 3.0A 1.25W 82mohm 10V
Datasheet: SI2319DS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4896 ea
Line Total: USD 0.49 
Availability - 3170
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3170
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4896
10 : USD 0.3901
30 : USD 0.3463
100 : USD 0.2927
500 : USD 0.2679
1000 : USD 0.2545

622894
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5348
10 : USD 0.4899
100 : USD 0.4048
500 : USD 0.3358
1000 : USD 0.3105
3000 : USD 0.284
6000 : USD 0.284
9000 : USD 0.276
24000 : USD 0.2737

1877
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 0.924
10 : USD 0.791
25 : USD 0.6174
38 : USD 0.4676
103 : USD 0.4424

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Factory Pack Quantity :
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI2319DS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2319DS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si2319DS Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 b V (V) R () I (A) DS DS(on) Available D 0.082 at V = - 10 V - 3.0 TrenchFET Power MOSFET GS - 40 0.130 at V = - 4.5 V - 2.4 GS APPLICATIONS Load Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2319DS (C9)* *Marking Code Ordering Information: Si2319DS-T1-E3 (Lead (Pb)-free) Si2319DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage - 40 DS V V Gate-Source Voltage 20 GS T = 25 C - 3.0 - 2.3 A b I Continuous Drain Current (T = 150 C) D J T = 70 C - 2.4 - 1.85 A A a I - 12 Pulsed Drain Current DM b I - 1.0 - 0.62 Continuous Source Current (Diode Conduction) S T = 25 C 1.25 0.75 A b P W Power Dissipation D T = 70 C 0.8 0.48 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b 75 100 Maximum Junction-to-Ambient R thJA c 120 166 C/W Maximum Junction-to-Ambient R Maximum Junction-to-Foot (Drain) 40 50 thJF Notes: a. Pulse width limited by maximum junction temperature. b. Surface mounted on FR4 board, t 5 s. c. Surface Mounted on FR4 board. For Spice model information via the worldwide web: www.vishay.com/www/product/spice.htm. Document Number: 72315 www.vishay.com S09-0130-Rev. C, 02-Feb-09 1Si2319DS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 40 DS GS D V V V = V , I = - 250 A Gate Threshold Voltage - 1 - 3.0 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 40 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 40 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 6 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 3.0 A 0.065 0.082 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 2.4 A 0.100 0.130 GS D a g V = - 5 V, I = - 3.0 A 7.0 S Forward Transconductance fs DS D a V I = - 1.25 A, V = 0 V - 0.8 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 11.3 17 g V = - 20 V, V = - 10 V DS GS Gate-Source Charge Q 1.7 nC gs I - 3 A D Q Gate-Drain Charge 3.3 gd Input Capacitance C 470 iss C V = - 20 V, V = 0 V, f = 1 MHz Output Capacitance 85 pF oss DS GS Reverse Transfer Capacitance C 65 rss c Switching t 715 d(on) Turn-On Time V = - 20 V, R = 20 DD L t 15 25 r I - 1.0 A, V = - 4.5 V ns D GEN t 25 40 d(off) R = 6 g Turn-Off Time t 25 40 f Notes: a. Pulse test: PW 300 s duty cycle 2 %. b. For design aid only, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72315 2 S09-0130-Rev. C, 02-Feb-09

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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