X-On Electronics has gained recognition as a prominent supplier of SI2333DDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2333DDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2333DDS-T1-GE3 Vishay

SI2333DDS-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI2333DDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 12 V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet: SI2333DDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1404 ea
Line Total: USD 421.2 
Availability - 17460
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
29100
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1574
30000 : USD 0.1436

17460
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1404
6000 : USD 0.1404
12000 : USD 0.1404
15000 : USD 0.1404
45000 : USD 0.1404

3350
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.3217
50 : USD 0.2515
150 : USD 0.2214
500 : USD 0.1839
3000 : USD 0.1673
6000 : USD 0.1572

3441
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.49
3 : USD 0.476
10 : USD 0.42
25 : USD 0.3542
71 : USD 0.2422

17460
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1672
30000 : USD 0.1526

29100
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1574
30000 : USD 0.1436

84390
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.24
42000 : USD 0.2193
63000 : USD 0.2041
84000 : USD 0.1924

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2333DDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2333DDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Image Part-Description
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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.The SI2333DDS-T1-GE3 is a P-Channel MOSFET manufactured by Vishay. It is packaged in an SOT-23-3 (TO-236) Surface Mount profile. The device has a maximum voltage rating of 12 V and maximum continuous drain current rating of 6 A (Tc). It also has a power dissipation of 1.2 W (Ta) and 1.7 W (Tc). The SI2333DDS-T1-GE3 is ideal for low voltage surface mount applications such as battery-powered devices and low ON resistance switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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