X-On Electronics has gained recognition as a prominent supplier of SI2337DS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2337DS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2337DS-T1-E3 Vishay

SI2337DS-T1-E3 electronic component of Vishay
SI2337DS-T1-E3 Vishay
SI2337DS-T1-E3 MOSFETs
SI2337DS-T1-E3 Semiconductors

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See Product Specifications
Part No. SI2337DS-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 80V 2.2A 2.5W
Surface-mount dual N-channel power MOSFET with low RDS(on).
Datasheet: SI2337DS-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.808 ea
Line Total: USD 0.81 
Availability - 7482
Ship by Fri. 09 May to Wed. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1

 SI2337DS-T1-E3 More Buying Options & Price Grid(s)

Availability Price Quantity
5820
Ship by Fri. 02 May to Thu. 08 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.35
6000 : USD 0.35
9000 : USD 0.3437
12000 : USD 0.3437
15000 : USD 0.3375

7482
Ship by Fri. 09 May to Wed. 14 May
MOQ : 1
Multiples : 1
1 : USD 0.808
10 : USD 0.6476
30 : USD 0.5796
100 : USD 0.3341
500 : USD 0.2902
1000 : USD 0.2755

26448
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 1.0463
10 : USD 0.6737
25 : USD 0.6348
100 : USD 0.4829
250 : USD 0.4818
500 : USD 0.44
1000 : USD 0.4169
3000 : USD 0.4147
6000 : USD 0.4125

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2337DS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2337DS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2337DS-T1-E3 is an N Channel enhancement mode MOSFET manufactured by Vishay. It has a maximum drain current of 2.7A and a breakdown voltage of 37V. It has a low on-state resistance of 0.017 Ohm and a maximum Gate-Source Voltage of +/- 12V. This part is designed for use in switching applications requiring moderate load and low power loss. It is housed in the space saving SOT-23 package and has a maximum junction temperature of 150C.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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