Product Information

SI2337DS-T1-E3

SI2337DS-T1-E3 electronic component of Vishay

Datasheet
MOSFET 80V 2.2A 2.5W
Surface-mount dual N-channel power MOSFET with low RDS(on).
Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7656 ea
Line Total: USD 0.77

185 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.4889

5820 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.5193

185 - WHS 3


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7656
10 : USD 0.6314
30 : USD 0.5624
100 : USD 0.4972
500 : USD 0.4262
1000 : USD 0.4044

84002 - WHS 4


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7392
10 : USD 0.6573
100 : USD 0.5565
500 : USD 0.509
1000 : USD 0.4616
3000 : USD 0.4473
6000 : USD 0.4473
9000 : USD 0.4307
24000 : USD 0.4295

14550 - WHS 5


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.6232

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

The SI2337DS-T1-E3 is an N Channel enhancement mode MOSFET manufactured by Vishay. It has a maximum drain current of 2.7A and a breakdown voltage of 37V. It has a low on-state resistance of 0.017 Ohm and a maximum Gate-Source Voltage of +/- 12V. This part is designed for use in switching applications requiring moderate load and low power loss. It is housed in the space saving SOT-23 package and has a maximum junction temperature of 150C.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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