Si2343DS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) DS DS(on) D Available 0.053 at V = - 10 V - 4.0 GS TrenchFET Power MOSFET - 30 0.086 at V = - 4.5 V - 3.1 GS APPLICATIONS Load Switch PA Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2343DS (F3)* * Marking Code Ordering Information: Si2343DS-T1 Si2343DS-T1-E3 (Lead (Pb)-free) Si2343DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V - 30 DS V V Gate-Source Voltage 20 GS T = 25 C - 4.0 - 3.1 A a, b I Continuous Drain Current (T = 150 C) D J T = 70 C - 3.2 - 2.5 A A I Pulsed Drain Current - 15 DM a, b I - 1.0 - 0.6 Continuous Source Current (Diode Conduction) S T = 25 C 1.25 0.75 A a, b P W Maximum Power Dissipation D T = 70 C 0.8 0.48 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 75 100 a R Maximum Junction-to-Ambient thJA Steady State 120 166 C/W R Maximum Junction-to-Foot (Drain) Steady State 40 50 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Pulse width limited by maximum junction temperature. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 72079 www.vishay.com S09-0133-Rev. B, 02-Feb-09 1Si2343DS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Limits Parameter Symbol Test Conditions Unit Min. Typ. Max. Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 30 (BR)DSS GS D V V V = V , I = - 250 A Gate-Threshold Voltage - 1 - 3 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 24 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 24 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 15 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 4.0 A 0.043 0.053 GS D a R Drain-Source On-Resistance DS(on) V = - 4.5 V, I = - 3.1 A 0.068 0.086 GS D a g V = - 5 V, I = - 4.0 A 10 S Forward Transconductance fs DS D V I = - 1.0 A, V = 0 V Diode Forward Voltage - 0.7 - 1.2 V SD S GS b Dynamic Total Gate Charge Q 14 21 g V = - 15 V, V = - 10 V DS GS Q Gate-Source Charge 1.9 nC gs I - 4.0 A D Gate-Drain Charge Q 3.7 gd C Input Capacitance 540 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 131 pF oss DS GS C Reverse Transfer Capacitance 105 rss c Switching t 10 15 d(on) Turn-On Time V = - 15 V, R = 15 DD L t 15 25 r I - 1.0 A, V = - 10 V ns D GEN t 31 50 d(off) R = 6 G Turn-Off Time t 20 30 f Notes: a. Pulse test: PW 300 s, duty cycle 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72079 2 S09-0133-Rev. B, 02-Feb-09