Product Information

SI2356DS-T1-GE3

SI2356DS-T1-GE3 electronic component of Vishay

Datasheet
N-Channel 40 V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1031 ea
Line Total: USD 309.3

8730 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
8730 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.1031
6000 : USD 0.1031
9000 : USD 0.1031

4351 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.214
10 : USD 0.2119
25 : USD 0.2033
100 : USD 0.1448
250 : USD 0.1365
500 : USD 0.1338
1000 : USD 0.1338
3000 : USD 0.1338

2910 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.1149

4067 - WHS 4


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4874
10 : USD 0.3888
30 : USD 0.3474
100 : USD 0.2941
500 : USD 0.2704
1000 : USD 0.2565

20370 - WHS 5


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.1208

4351 - WHS 6


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 67
Multiples : 1
67 : USD 0.2033
100 : USD 0.1448
250 : USD 0.1365
500 : USD 0.1338

8730 - WHS 7


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.1031

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif

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The Vishay SI2356DS-T1-GE3 is an N-Channel 40 V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236) device. It is an advanced trench technology MOSFET capable of operating at very low on-states with fast switching speeds. It has low threshold voltage and low Gate charge. The device is an ultra-low RDS(ON) to minimize conduction losses. The package is small, thin andthermally enhanced, ideal for space-constrained and surface mount applications. It is AEC-Q101 qualified to assure reliability and durability over extended temperature and physical stress conditions.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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