X-On Electronics has gained recognition as a prominent supplier of SI2356DS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2356DS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2356DS-T1-GE3 Vishay

SI2356DS-T1-GE3 electronic component of Vishay
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Part No.SI2356DS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 40 V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet: SI2356DS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1094 ea
Line Total: USD 328.2 
Availability - 8730
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
3381
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.546
10 : USD 0.3341
25 : USD 0.3068
100 : USD 0.2591
250 : USD 0.2536
500 : USD 0.2034
1000 : USD 0.1818
3000 : USD 0.1154

1496
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3961
10 : USD 0.3166
30 : USD 0.2769
100 : USD 0.2469
500 : USD 0.2231
1000 : USD 0.2113

5306
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.476
10 : USD 0.35
25 : USD 0.28
100 : USD 0.196
113 : USD 0.1498

8730
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1094

3381
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 67
Multiples : 1
67 : USD 0.1154

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
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Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Transistor Type
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Cnhts
Hts Code
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Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2356DS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2356DS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The Vishay SI2356DS-T1-GE3 is an N-Channel 40 V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236) device. It is an advanced trench technology MOSFET capable of operating at very low on-states with fast switching speeds. It has low threshold voltage and low Gate charge. The device is an ultra-low RDS(ON) to minimize conduction losses. The package is small, thin andthermally enhanced, ideal for space-constrained and surface mount applications. It is AEC-Q101 qualified to assure reliability and durability over extended temperature and physical stress conditions.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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