X-On Electronics has gained recognition as a prominent supplier of SI2356DS-T1-GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SI2356DS-T1-GE3 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SI2356DS-T1-GE3 Vishay

SI2356DS-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI2356DS-T1-GE3
Manufacturer: Vishay
Category: MOSFET
Description: N-Channel 40 V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet: SI2356DS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1031 ea
Line Total: USD 309.3

Availability - 14550
Ship by Mon. 05 Aug to Fri. 09 Aug
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2910
Ship by Mon. 05 Aug to Fri. 09 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.1118
9000 : USD 0.1053
24000 : USD 0.1051

3381
Ship by Mon. 05 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 0.493
10 : USD 0.3887
25 : USD 0.3376
100 : USD 0.2175
250 : USD 0.2158
500 : USD 0.2133
1000 : USD 0.1478
3000 : USD 0.1154

14550
Ship by Mon. 05 Aug to Fri. 09 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.1031
9000 : USD 0.1031
12000 : USD 0.1031
30000 : USD 0.1031
45000 : USD 0.1031

3150
Ship by Mon. 12 Aug to Thu. 15 Aug
MOQ : 1
Multiples : 1
1 : USD 0.3961
10 : USD 0.3166
30 : USD 0.2769
100 : USD 0.2469
500 : USD 0.2231
1000 : USD 0.2113

2910
Ship by Mon. 05 Aug to Fri. 09 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.1118
9000 : USD 0.1053
24000 : USD 0.1051

3381
Ship by Mon. 05 Aug to Fri. 09 Aug
MOQ : 3000
Multiples : 1
3000 : USD 0.1154

8730
Ship by Mon. 05 Aug to Fri. 09 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.1847

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
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We are delighted to provide the SI2356DS-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2356DS-T1-GE3 and other electronic components in the MOSFET category and beyond.

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The Vishay SI2356DS-T1-GE3 is an N-Channel 40 V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236) device. It is an advanced trench technology MOSFET capable of operating at very low on-states with fast switching speeds. It has low threshold voltage and low Gate charge. The device is an ultra-low RDS(ON) to minimize conduction losses. The package is small, thin andthermally enhanced, ideal for space-constrained and surface mount applications. It is AEC-Q101 qualified to assure reliability and durability over extended temperature and physical stress conditions.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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