X-On Electronics has gained recognition as a prominent supplier of SI2356DS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2356DS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2356DS-T1-GE3 Vishay

SI2356DS-T1-GE3 electronic component of Vishay
SI2356DS-T1-GE3 Vishay
SI2356DS-T1-GE3 MOSFETs
SI2356DS-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI2356DS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 40 V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet: SI2356DS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6000: USD 0.1297 ea
Line Total: USD 778.2 
Availability - 5820
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ: 6000  Multiples: 6000
Pack Size: 6000
Availability Price Quantity
1926
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 109
Multiples : 1
109 : USD 0.5946
184 : USD 0.3528
210 : USD 0.3089
325 : USD 0.2002
328 : USD 0.1983
500 : USD 0.1962
1000 : USD 0.1154

1085
Ship by Fri. 10 Jan to Wed. 15 Jan
MOQ : 1
Multiples : 1
1 : USD 0.3961
10 : USD 0.3166
30 : USD 0.2769
100 : USD 0.2469
500 : USD 0.2231
1000 : USD 0.2113

5268
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 0.476
10 : USD 0.35
25 : USD 0.2786
100 : USD 0.196
114 : USD 0.1498
313 : USD 0.1414
3000 : USD 0.1372

1926
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 563
Multiples : 1
563 : USD 0.1154

5820
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 6000
Multiples : 6000
6000 : USD 0.1297
9000 : USD 0.1117
24000 : USD 0.1078
45000 : USD 0.1066
99000 : USD 0.1054

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
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Taric
Typical Turn-On Delay Time
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We are delighted to provide the SI2356DS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2356DS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Image Part-Description
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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The Vishay SI2356DS-T1-GE3 is an N-Channel 40 V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236) device. It is an advanced trench technology MOSFET capable of operating at very low on-states with fast switching speeds. It has low threshold voltage and low Gate charge. The device is an ultra-low RDS(ON) to minimize conduction losses. The package is small, thin andthermally enhanced, ideal for space-constrained and surface mount applications. It is AEC-Q101 qualified to assure reliability and durability over extended temperature and physical stress conditions.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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