X-On Electronics has gained recognition as a prominent supplier of SI3437DV-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI3437DV-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI3437DV-T1-E3 Vishay

SI3437DV-T1-E3 electronic component of Vishay
SI3437DV-T1-E3 Vishay
SI3437DV-T1-E3 MOSFETs
SI3437DV-T1-E3  Semiconductors

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See Product Specifications
Part No. SI3437DV-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 150V 1.4A 3.2W 750 mohms @ 10V
Datasheet: SI3437DV-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8921 ea
Line Total: USD 0.89 
Availability - 77443
Ship by Thu. 23 Jan to Mon. 27 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
668
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 100
Multiples : 1
100 : USD 0.6486
116 : USD 0.5621
116 : USD 0.5597
135 : USD 0.4814
250 : USD 0.4712
500 : USD 0.41

40740
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.3765
6000 : USD 0.3727

20370
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.377
6000 : USD 0.3705
9000 : USD 0.3705
12000 : USD 0.364

2734
Ship by Mon. 03 Feb to Thu. 06 Feb
MOQ : 1
Multiples : 1
1 : USD 0.7457
10 : USD 0.6601
30 : USD 0.6174
100 : USD 0.5766
500 : USD 0.5504
1000 : USD 0.5374

77443
Ship by Thu. 23 Jan to Mon. 27 Jan
MOQ : 1
Multiples : 1
1 : USD 0.8921
10 : USD 0.6468
100 : USD 0.4752
500 : USD 0.3938
1000 : USD 0.3696
3000 : USD 0.3366
6000 : USD 0.3311
9000 : USD 0.3223
24000 : USD 0.3146

668
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 111
Multiples : 1
111 : USD 0.5863
111 : USD 0.5835
131 : USD 0.4959
250 : USD 0.4844
500 : USD 0.41

40740
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.3765
6000 : USD 0.3727

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Series
Transistor Type
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the SI3437DV-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI3437DV-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si3437DV Vishay Siliconix P-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.75 at V = - 10 V - 1.4 TrenchFET Power MOSFET GS - 150 8 nC 100 % R and UIS Tested g 0.79 at V = - 6 V - 1.3 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS Active Clamp Circuits in DC/DC Power Supplies TSOP-6 Top View S D D 1 6 3 mm D 5 D 2 Marking Code G AH XXX G S 3 4 Lot Tracea bility and Date Code Part Code 2. 85 mm D Ordering Information: Si3437DV-T1-E3 (Lead (Pb)-free) Si3437DV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 150 DS V V Gate-Source Voltage 20 GS T = 25 C - 1.4 C T = 70 C - 1.1 C Continuous Drain Current (T = 150 C) I J D b,c T = 25 C - 1.1 A b,c T = 70 C - 0.88 A A I - 5 Pulsed Drain Current DM - 2.6 T = 25 C C I Continuous Source-Drain Diode Current S b,c T = 25 C 1.6 A Avalanche Current I 5 AS L = 0.1 mH Single-Pulse Avalanche Energy E 1.25 mJ AS T = 25 C 3.2 C T = 70 C 2.1 C P Maximum Power Dissipation W D b,c T = 25 C 2 A b,c T = 70 C 1.25 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b, d t 5 s R 51 62.5 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot Steady State R 32 39 thJF Notes: a. T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 C/W. Document Number: 73899 www.vishay.com S09-0766-Rev. B, 04-May-09 1Si3437DV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 150 V DS GS D V Temperature Coefficient V /T - 160 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5.5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 2 - 4 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 150 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 150 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 10 V, V = - 10 V - 3 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 1.4 A 0.61 0.75 GS D a R Drain-Source On-State Resistance DS(on) V = - 6 V, I = - 1 A 0.64 0.79 GS D a g V = - 10 V, I = - 1.4 A 4.5 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 510 iss C V = - 50 V, V = 0 V, f = 1 MHz Output Capacitance 30 pF oss DS GS C Reverse Transfer Capacitance 21 rss V = - 75 V, V = - 10 V, I = - 1 A 12.2 19 DS GS D Q Total Gate Charge g 812 nC Q V = - 75 V, V = - 6 V, I = - 1 A Gate-Source Charge 2.1 gs DS GS D Q Gate-Drain Charge 3.9 gd R Gate Resistance f = 1 MHz 8.5 13 g t Turn-On Delay Time 915 d(on) t V = - 75 V, R = 75 Rise Time 11 18 r DD L t I - 1 A, V = - 10 V, R = 1 Turn-Off DelayTime 28 42 d(off) D GEN g t Fall Time 12 18 f ns t Turn-On Delay Time 14 21 d(on) t V = - 75 V, R = 75 Rise Time 29 44 r DD L t I - 1 A, V = - 6 V, R = 1 Turn-Off DelayTime 23 35 d(off) D GEN g t Fall Time 14 21 f Drain-Source Body Diode Characteristics I T = 25 C Continous Source-Drain Diode Current - 1.4 S C A I Pulse Diode Forward Current - 5 SM V I = - 1 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 60 90 ns rr Q Body Diode Reverse Recovery Charge 120 180 nC rr I = - 1.2 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 35 a ns t Reverse Recovery Rise Time 25 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73899 2 S09-0766-Rev. B, 04-May-09

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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