X-On Electronics has gained recognition as a prominent supplier of SI3440ADV-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI3440ADV-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI3440ADV-T1-GE3 Vishay

SI3440ADV-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI3440ADV-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Trans MOSFET N-CH 150V 1.6A 6-Pin TSOP T/R
Datasheet: SI3440ADV-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6346 ea
Line Total: USD 0.63 
Availability - 2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5723
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6577
10 : USD 0.6553
25 : USD 0.6529
100 : USD 0.6505
250 : USD 0.6481
500 : USD 0.6457
1000 : USD 0.6434
3000 : USD 0.6408

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6346
10 : USD 0.4246
100 : USD 0.2318
1000 : USD 0.2013
3000 : USD 0.1324
9000 : USD 0.1315
99000 : USD 0.131

   
Manufacturer
Product Category
Packaging
Channel Mode
Configuration
Channel Type
Number Of Elements Per Chip
Maximum Drain Source Voltage V
Maximum Gate Source Voltage V
Maximum Continuous Drain Current A
Maximum Drain Source Resistance Mohm
Typical Gate Charge @ Vgs Nc
Typical Gate Charge @ 10V Nc
Typical Input Capacitance @ Vds Pf
Maximum Power Dissipation Mw
Typical Fall Time Ns
Typical Rise Time Ns
Typical Turn-Off Delay Time Ns
Typical Turn-On Delay Time Ns
Minimum Operating Temperature °C
Maximum Operating Temperature °C
Automotive
Pin Count
Supplier Package
Military
Mounting
Package Height
Package Length
Package Width
Pcb Changed
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We are delighted to provide the SI3440ADV-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI3440ADV-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si3440ADV www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES TSOP-6 Single S ThunderFET power MOSFET 4 D 100 % R tested g 5 D Material categorization: 6 for definitions of compliance please see www.vishay.com/doc 99912 3 APPLICATIONS D G 2 D DC/DC converters 1 D Boost converters Top View G LED backlighting Marking code: BS PD switch N-Channel MOSFET S Load switch PRODUCT SUMMARY V (V) 150 DS R max. () at V = 10 V 0.380 DS(on) GS R max. () at V = 4.5 V 0.432 DS(on) GS Q typ. (nC) 1.65 g d I (A) 2.2 D Configuration Single ORDERING INFORMATION Package TSOP-6 Lead (Pb)-free and halogen-free Si3440ADV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 150 DS V Gate-source voltage V 20 GS T = 25 C 2.2 C T = 70 C 1.7 C Continuous drain current (T = 150 C) I J D a, b T = 25 C 1.6 A a, b T = 70 C 1.3 A A Pulsed drain current (t = 100 s) I 4 DM T = 25 C 3 C Continuous source-drain diode current I S a, b T = 25 C 1.7 A Single pulse avalanche current I 3 AS L = 0.1 mH Single pulse avalanche energy E 0.45 mJ AS T = 25 C 3.6 C T = 70 C 2.3 C Maximum power dissipation P W D a, b T = 25 C 2 A a, b T = 70 C 1.3 A Operating junction and storage temperature range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT a, c Maximum junction-to-ambient t 10 s R 50 62.5 thJA C/W Maximum junction-to-foot (drain) Steady state R 28 35 thJF Notes a. Surface mounted on 1 x 1 FR4 board b. t = 10 s c. Maximum under steady state conditions is 110 C/W d. T = 25 C C S17-0904-Rev. B, 12-Jun-17 Document Number: 75594 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si3440ADV www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 150 - - V DS GS D V temperature coefficient V /T - 135 - DS DS J I = 250 A mV/C D V temperature coefficient V /T --5.6- GS(th) GS(th) J Gate-source threshold voltage V V = V , I = 250 A 2 - 4 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 150 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 150 V, V = 0 V, T = 70 C - - 10 DS GS J a On-state drain current I V 10 V, V = 10 V 4 - - A D(on) DS GS V = 10 V, I = 1.5 A - 0.316 0.380 GS D a Drain-source on-state resistance R DS(on) V = 7.5 V, I = 1 A - 0.345 0.432 GS D a Forward transconductance g V = 50 V, I = 1.5 A - 2.4 - S fs DS D b Dynamic Input capacitance C -80 - iss Output capacitance C V = 75 V, V = 0 V, f = 1 MHz -26 - pF oss DS GS Reverse transfer capacitance C -3 - rss V = 75 V, V = 10 V, I = 0.5 A - 2 4 DS GS D Total gate charge Q g -1.65 3 nC Gate-source charge Q V = 75 V, V = 4.5 V, I = 0.5 A -0.5 - gs DS GS D Gate-drain charge Q -0.7 - gd Gate resistance R f = 1 MHz 0.7 3.5 7 g Turn-on delay time t -8 16 d(on) Rise time t -22 35 V = 75 V, R = 57.7 , I 1.3 A, r DD L D V = 10 V, R = 1 Turn-off delay time t GEN g -9 18 d(off) Fall time t -22 35 f ns Turn-on delay time t -10 20 d(on) Rise time t -25 40 V = 75 V, R = 57.7 , I 1.3 A, r DD L D V = 7.5 V, R = 1 Turn-off delay time t GEN g -10 20 d(off) Fall time t -24 50 f Drain-Source Body Diode Characteristics Continuous source-drain diode current I T = 25 C - - 1.7 S C A Pulse diode forward current I -- 4 SM Body diode voltage V I = 1.3 A, V = 0 V - 0.85 1.2 V SD S GS Body diode reverse recovery time t -44 66 ns rr Body diode reverse recovery charge Q -53 80 nC rr I = 1.3 A, di/dt = 100 A/s, T = 25 C F J Reverse recovery fall time t -27 - a ns Reverse recovery rise time t -17 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0904-Rev. B, 12-Jun-17 Document Number: 75594 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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