Si3441BDV Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.090 at V = - 4.5 V - 2.9 GS TrenchFET Power MOSFETs - 20 0.130 at V = - 2.5 V - 2.45 GS Compliant to RoHS Directive 2002/95/EC TSOP-6 (4) S Top View 1 6 3 mm 5 2 (3) G 3 4 2.85 mm Ordering Information: Si3441BDV-T1-E3 (Lead (Pb)-free) (1, 2, 5, 6) D Si3441BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET Marking Code: B1xxx ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V - 20 DS V V Gate-Source Voltage 8 GS T = 25 C - 2.9 - 2.45 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 2.35 -1.95 A A I Pulsed Drain Current - 16 DM a I - 1.0 - 0.72 Continuous Source Current (Diode Conduction) S T = 25 C 1.25 0.86 A a P W Maximum Power Dissipation D = 70 C T 0.8 0.55 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 80 100 a R Maximum Junction-to-Ambient thJA Steady State 120 145 C/W R Maximum Junction-to-Foot (Drain) Steady State 70 85 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72028 www.vishay.com S09-2275-Rev. D, 02-Nov-09 1Si3441BDV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 0.45 - 0.85 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 20 V, V = 0 V, T = 70 C - 5 DS GS J V = - 5 V, V = - 4.5 V - 10 DS GS a I A On-State Drain Current D(on) V = - 5 V, V = - 2.5 V - 4 DS GS V = - 4.5 V, I = - 3.3 A 0.070 0.090 GS D a R Drain-Source On-State Resistance DS(on) V = - 2.5 V, I = - 2.9 A 0.098 0.130 GS D a g V = - 10 V, I = - 3.3 A 8.0 S Forward Transconductance fs DS D a V I = - 1.6 A, V = 0 V - 0.8 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 5.2 8.0 g Q V = - 10 V, V = - 4.5 V, I = - 3.3 A Gate-Source Charge 0.8 nC gs DS GS D Gate-Drain Charge Q 1.5 gd t Turn-On Delay Time 15 25 d(on) t Rise Time V = - 10 V, R = 10 55 85 r DD L I - 1.0 A, V = - 4.5 V, R = 6 t Turn-Off Delay Time D GEN g 30 45 ns d(off) t Fall Time 40 60 f t I = - 1.6 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 50 80 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 V = 4.5 V thru 3.5 V T = - 55 C GS 3 V C 16 16 25 C 2.5 V 125 C 12 12 8 8 2 V 4 4 1.5 V 1 V 0 0 0 1234 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72028 2 S09-2275-Rev. D, 02-Nov-09 I - Drain Current (A) D I - Drain Current (A) D