Product Information

SI3430DV-T1-E3

SI3430DV-T1-E3 electronic component of Vishay

Datasheet
MOSFET 100V 8A 2W
High-voltage insulated gate bipolar transistor with LOI technology for improved reliability.
Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4764 ea
Line Total: USD 1.48

16671 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
12260 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 1.1984
10 : USD 0.9943
100 : USD 0.7961
500 : USD 0.6953
1000 : USD 0.5814
3000 : USD 0.5553
6000 : USD 0.5553
9000 : USD 0.5339

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Additional Infomation About Product

The SI3430DV-T1-E3 is a low voltage, low on-resistance, low capacitance, logic level, N-Channel MOSFET produced by Vishay. It is designed for heavy load switching applications, such as switching DC motors, and high-current switching applications. This MOSFET is suitable for operating with voltages up to 30V and offers an extremely low on-resistance of 0.3O. It also features a low gate charge for optimal efficiency, making it suitable for high-performance applications. The SI3430DV-T1-E3 is packaged in a SOT-23-5 lead configuration.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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