New Product Si3433CDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.038 at V = - 4.5 V - 6 GS TrenchFET Power MOSFET 0.046 at V = - 2.5 V - 20 - 6 18 nC GS APPLICATIONS 0.060 at V = - 1.8 V - 6 GS Load Switch Notebook TSOP-6 (4) S Top View 1 6 3 mm 5 2 (3) G Marking Code AX XXX 3 4 Lot Traceability and Date Code Part Code 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3433CDV-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si3433CDV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 8.0 GS a T = 25 C - 6.0 C a T = 70 C - 6.0 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 5.2 A b, c T = 70 C A - 4.2 A Pulsed Drain Current I - 20 DM T = 25 C - 2.7 C I Continuous Source-Drain Diode Current b, c S T = 25 C - 1.3 A T = 25 C 3.3 C T = 70 C 2.1 C P Maximum Power Dissipation W D b, c T = 25 C 1.6 A b, c T = 70 C 1.0 A T , T Operating Junction and Storage Temperature Range C J stg - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 5 s R 60 80 Maximum Junction-to-Ambient thJA C/W Steady State R Maximum Junction-to-Foot (Drain) 25 38 thJF Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 C/W. Document Number: 68803 www.vishay.com S09-0387-Rev. B, 09-Mar-09 1New Product Si3433CDV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 18 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1.0 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 20 V, V = 0 V, T = 85 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 5.2 A 0.031 0.038 GS D a R V = - 2.5 V, I = - 4.8 A 0.037 0.046 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 2 A 0.046 0.060 GS D a g V = - 6 V, I = - 5.2 A 20 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1300 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 210 pF oss DS GS C Reverse Transfer Capacitance 180 rss V = - 10 V, V = - 8 V, I = - 5.2 A 30 45 DS GS D Total Gate Charge Q g 18 27 nC Q Gate-Source Charge V = - 10 V, V = - 4.5 V, I = - 5.2 A 2.1 gs DS GS D Q Gate-Drain Charge 4.8 gd R Gate Resistance f = 1 MHz 6 g Turn-On Delay Time t 20 30 d(on) t Rise Time V = - 10 V, R = 2.4 22 35 r DD L I - 4.2 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 50 75 D GEN g d(off) t Fall Time 20 30 f ns Turn-On Delay Time t 10 15 d(on) t Rise Time V = - 10 V, R = 2.4 12 25 r DD L I - 4.2 A, V = - 8 V, R = 1 t Turn-Off Delay Time 50 75 d(off) D GEN g t Fall Time 15 25 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 2.7 S C A a I - 20 Pulse Diode Forward Current SM Body Diode Voltage V I = - 4.2 A - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 45 70 ns rr Q Body Diode Reverse Recovery Charge 40 60 nC rr I = - 4.2 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 23 a ns t Reverse Recovery Rise Time 22 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68803 2 S09-0387-Rev. B, 09-Mar-09