Si3440DV Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.375 at V = 10 V 1.5 GS TrenchFET Power MOSFET 150 0.400 at V = 6.0 V 1.4 GS PWM Optimized for Fast Switching In Small Footprint 100 % R Tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch for Low Power DC/DC Converters (1, 2, 5, 6) D TSOP-6 Top V iew 1 6 3 mm 5 2 (3) G 3 4 2.85 mm (4) S Ordering Information: Si3440DV-T1-E3 (Lead (Pb)-free) Si3440DV-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage 150 DS V Gate-Source Voltage V 20 GS T = 25 C 1.5 1.2 A a I Continuous Drain Current (T = 175 C) D J T = 85 C 1.1 0.8 A A I Pulsed Drain Current 6 DM I Single Avalanche Current 4 AS L = 0.1 mH E Single Avalanche Energy (Duty Cycle 1 %) 0.8 mJ AS a I 1.7 1.0 A Continuous Source Current (Diode Conduction) S T = 25 C 2.0 1.14 A a P W Maximum Power Dissipation D T = 85 C 1.0 0.59 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 45 62.5 a R Maximum Junction-to-Ambient thJA Steady State 90 110 C/W R Maximum Junction-to-Foot (Drain) Steady State 25 30 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72380 www.vishay.com S09-0766-Rev. D, 04-May-09 1Si3440DV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 24V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 150 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 150 V, V = 0 V, T = 85 C 5 DS GS J a I V 5 V, V = 10 V 4A On-State Drain Current D(on) DS GS V = 10 V, I = 1.5 A 0.310 0.375 GS D a R Drain-Source On-State Resistance DS(on) V = 6.0 V, I = 1.4 A 0.330 0.400 GS D a g V = 15 V, I = 1.5 A 4.1 S Forward Transconductance fs DS D a V I = 1.7 A, V = 0 V 0.8 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 5.4 8 g Q V = 75 V, V = 10 V, I = 1.5 A Gate-Source Charge 1.1 nC gs DS GS D Gate-Drain Charge Q 1.9 gd R Gate Resistance f = 1 MHz 4 9 15 g Turn-On Delay Time t 815 d(on) t Rise Time V = 75 V, R = 75 10 15 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 20 30 ns D GEN g d(off) t Fall Time 15 25 f Source-Drain Reverse Recovery Time t I = 1.7 A, dI/dt = 100 A/s 40 60 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 4.0 4.0 V = 10 V thru V 5 GS 3.5 3.5 3.0 3.0 2.5 2.5 2.0 2.0 1.5 1.5 T = 125 C 1.0 C 1.0 4 V 25 C 0.5 0.5 3 V - 55 C 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 V - Drain-to-Source Voltage (V) DS V - Gate-to-Source Voltage (V) GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72380 2 S09-0766-Rev. D, 04-May-09 I - Drain Current (A) D I - Drain Current (A) D