Si3442BDV Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.057 at V = 4.5 V 4.2 GS TrenchFET Power MOSFET 20 0.090 at V = 2.5 V 3.4 GS Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View (1, 2, 5, 6) D 1 6 3 mm 5 2 (3) G 3 4 2.85 mm Ordering Information: Si3442BDV-T1-E3 (Lead (Pb)-free) (4) S Si3442BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET Marking Code: 2Bxxx ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage 20 DS V V Gate-Source Voltage 12 GS T = 25 C 4.2 3.0 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 3.4 2.4 A A I Pulsed Drain Current 20 DM a I 1.4 0.72 Continuous Source Current (Diode Conduction) S T = 25 C 1.67 0.86 A a P W Maximum Power Dissipation D T = 70 C 1.07 0.55 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 75 100 a R Maximum Junction-to-Ambient thJA Steady State 120 145 C/W R Maximum Junction-to-Foot (Drain) Steady State 70 85 thJF Note: a. Surface Mounted on FR4 board, t 5 s. Document Number: 72504 www.vishay.com S09-2110-Rev. E, 12-Oct-09 1Si3442BDV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.6 1.8 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Body Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 20 V, V = 0 V, T = 70 C 5 DS GS J V = 5 V, V = 4.5 V 10 DS GS a I A On-State Drain Current D(on) V = 5 V, V = 2.5 V 4 DS GS V = 4.5 V, I = 4 A 0.045 0.057 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 3.4 A 0.070 0.090 GS D a g V = 10 V, I = 4.0 A 11.3 S Forward Transconductance fs DS D a V I = 1.6 A, V = 0 V 0.75 1.2 V Diode Forward Voltage SD S GS b Dynamic Input Capacitance C 295 iss C V = 10 V, V = 0 V, f = 1 MHz Output Capacitance 75 pF oss DS GS Reverse Transfer Capacitance C 45 rss Q Total Gate Charge 35 g Q V = 10 V, V = 4.5 V, I = 4.0 A Gate-Source Charge 0.65 nC gs DS GS D Q Gate-Drain Charge 0.95 gd R Gate Resistance f = 1 MHz 2.7 g t Turn-On Delay Time 35 55 d(on) t Rise Time V = 10 V, R = 10 50 75 r DD L I 1 A, V = 4.5 V, R = 6 t Turn-Off Delay Time D GEN g 20 30 ns d(off) t Fall Time 15 25 f Source-Drain Reverse Recovery Time t I = 1.6 A, dI/dt = 100 A/s 30 60 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 V = 5 V thru 3.5 V GS T = - 55 C C 3 V 16 16 25 C 12 12 125 C 2.5 V 8 8 4 2 V 4 1.5 V 0 0 0 1234 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Transfer Characteristics Output Characteristics www.vishay.com Document Number: 72504 2 S09-2110-Rev. E, 12-Oct-09 I - Drain Current (A) D I - Drain Current (A) D