X-On Electronics has gained recognition as a prominent supplier of SI2371EDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2371EDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2371EDS-T1-GE3 Vishay

SI2371EDS-T1-GE3 electronic component of Vishay
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Part No.SI2371EDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET -30V 45mOhm10V -4.8A P-Ch G-III
Datasheet: SI2371EDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3013 ea
Line Total: USD 0.3 
Availability - 728601
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Wed. 13 Nov to Tue. 19 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0955
9000 : USD 0.0884
24000 : USD 0.0794

5820
Ship by Wed. 13 Nov to Tue. 19 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.079
9000 : USD 0.079
15000 : USD 0.079
30000 : USD 0.079
60000 : USD 0.079

8181
Ship by Wed. 20 Nov to Mon. 25 Nov
MOQ : 5
Multiples : 5
5 : USD 0.1691
50 : USD 0.1346
150 : USD 0.1196
500 : USD 0.101
3000 : USD 0.0928
6000 : USD 0.0878

728601
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3013
10 : USD 0.1921
100 : USD 0.1115
1000 : USD 0.0874
3000 : USD 0.0805
9000 : USD 0.0747
24000 : USD 0.0713
99000 : USD 0.069

1901
Ship by Wed. 13 Nov to Tue. 19 Nov
MOQ : 234
Multiples : 1
234 : USD 0.1739
500 : USD 0.1707
1000 : USD 0.1139

2910
Ship by Wed. 13 Nov to Tue. 19 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0955
9000 : USD 0.0884
24000 : USD 0.0794

2910
Ship by Wed. 13 Nov to Tue. 19 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1031
9000 : USD 0.0953

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the SI2371EDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2371EDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si2371EDS Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () Max. Q (Typ.) I (A) 100 % R Tested DS DS(on) g D g Built-in ESD Protection 0.045 at V = - 10 V - 4.8 GS - Typical ESD Performance 3000 V 0.053 at V = - 4.5 V - 30 - 4.4 10.6 nC GS Material categorization: 0.080 at V = - 2.5 V - 3.6 GS For definitions of compliance please see www.vishay.com/doc 99912 TO-236 (SOT-23) APPLICATIONS Power Management for Portable and Consumer - Load Switches G 1 - OVP (Over Voltage Protection) Switch 3 S D S 2 Top View G Si2371EDS (E6)* * Marking Code D Ordering Information: P-Channel MOSFET Si2371EDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 30 DS V V Gate-Source Voltage 12 GS T = 25 C - 4.8 C T = 70 C - 3.8 C Continuous Drain Current (T = 150 C) I J D b,c T = 25 C - 3.7 A b,c T = 70 C A - 2.9 A Pulsed Drain Current (t = 300 s) I - 20 DM T = 25 C - 1.4 C Continuous Source-Drain Diode Current I S b,c T = 25 C - 1 A T = 25 C 1.7 C T = 70 C 1.1 C Maximum Power Dissipation P W D b,c T = 25 C 1 A b,c T = 70 C 0.6 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d R t 5 s 100 130 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 60 75 thJF Notes: a. T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 175 C/W. Document Number: 63924 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S13-0633-Rev. A, 25-Mar-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si2371EDS Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 30 V DS GS D V Temperature Coefficient V /T - 24 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.2 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.6 - 1.5 V GS(th) DS GS D V = 0 V, V = 12 V 10 DS GS I Gate-Source Leakage GSS V = 0 V, V = 4.5 V 1 DS GS A V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current DSS V = - 30 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 15 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 3.7 A 0.037 0.045 GS D a R V = - 4.5 V, I = - 2 A 0.044 0.053 Drain-Source On-State Resistance DS(on) GS D V = - 2.5 V, I = - 2 A 0.066 0.080 GS D b Dynamic V = - 15 V, V = - 10 V, I = - 3.7 A 22.8 35 DS GS D Q Total Gate Charge g 10.6 16 nC Q Gate-Source Charge V = - 15 V, V = - 4.5 V, I = - 3.7 A 1.7 gs DS GS D Q Gate-Drain Charge 2.6 gd R Gate Resistance f = 1 MHz 2.2 11 22 g Turn-On Delay Time t 28 42 d(on) t Rise Time V = - 15 V, R = 5.2 65 98 r DD L I - 2.9 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 47 71 D GEN g d(off) t Fall Time 62 93 f ns Turn-On Delay Time t 714 d(on) t Rise Time V = - 15 V, R = 5.2 816 r DD L - 2.9 A, V = - 10 V, R = 1 I Turn-Off Delay Time t 52 78 d(off) D GEN g t Fall Time 52 78 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 1.4 S C A I Pulse Diode Forward Current - 20 SM V I = - 2.9 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 13 20 ns rr Q Body Diode Reverse Recovery Charge 612 nC rr I = - 2.9 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 9 a ns t Reverse Recovery Rise Time 4 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 63924 2 S13-0633-Rev. A, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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