X-On Electronics has gained recognition as a prominent supplier of SI2342DS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2342DS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2342DS-T1-GE3 Vishay

SI2342DS-T1-GE3 electronic component of Vishay
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Part No.SI2342DS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 8V 6A 2.5
Datasheet: SI2342DS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3323 ea
Line Total: USD 0.33 
Availability - 41
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
41
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3323
10 : USD 0.2805
25 : USD 0.1919

2411
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4116
10 : USD 0.3282
30 : USD 0.2921
100 : USD 0.2466
500 : USD 0.2276
1000 : USD 0.2163

1416
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.602
10 : USD 0.5054
25 : USD 0.4494
66 : USD 0.259
181 : USD 0.245

41
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 40
Multiples : 1
40 : USD 0.1919

2910
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.3947

5820
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.4025

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Brand
Configuration
Series
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
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We are delighted to provide the SI2342DS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2342DS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI2342DS-T1-GE3 with Vishay Semiconductors MOSFET is a high-performance MOSFET manufactured by Vishay. It is designed to operate at 8V and 6A with a maximum 2.5 ohm channel resistance. It features the SuperTrench surface-mount technology and integrated gate protection, which helps minimize power losses during usage. In addition, its ultra-low capacitance and fast switching times make it ideal for use in automotive and industrial applications. Furthermore, it is RoHS compatible, making it a good choice for green designs.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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