Si2323DDS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET d V (V) R () Max. Q (Typ.) I (A) 100 % R Tested DS DS(on) g D g Material categorization: 0.039 at V = - 4.5 V - 5.3 GS For definitions of compliance please see - 20 0.050 at V = - 2.5 V - 4.7 13.6 nC GS www.vishay.com/doc 99912 0.075 at V = - 1.8 V - 3.8 GS APPLICATIONS TO-236 (SOT-23) Load Switch S PA Switch DC/DC Converters G 1 Power Management 3 D G S 2 Top View Si2323DDS (E4)* D * Marking Code P-Channel MOSFET Ordering Information: Si2323DDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 20 DS V V Gate-Source Voltage 8 GS T = 25 C - 5.3 C T = 70 C - 4.3 C Continuous Drain Current (T = 150 C) I J D a,b T = 25 C A - 4.1 a,b T = 70 C A A - 3.2 I - 20 Pulsed Drain Current (t = 300 s) DM T = 25 C - 1.4 C I Continuous Source-Drain Diode Current S a,b T = 25 C A - 0.8 T = 25 C 1.7 C T = 70 C 1.1 C Maximum Power Dissipation P W D a,b T = 25 C A 0.96 a,b T = 70 C A 0.62 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, c R t 5 s 100 130 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 60 75 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 175 C/W. d. T = 25 C. C Document Number: 64004 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-1165-Rev. A, 13-May-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si2323DDS Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 13 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T - 2.8 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 15 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 4.1 A 0.032 0.039 GS D a R V = - 2.5 V, I = - 2 A 0.041 0.050 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 1 A 0.058 0.075 GS D a g V = - 10 V, I = - 4.1 A 18 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 1160 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 135 pF oss DS GS C Reverse Transfer Capacitance 120 rss Q V = - 10 V, V = - 8 V, I = - 4.1 A Total Gate Charge 24 36 g DS GS D Q Total Gate Charge 13.6 21 g nC Q V = - 10 V, V = - 4.5 V, I = - 4.1 A Gate-Source Charge 2 gs DS GS D Q Gate-Drain Charge 2.2 gd R Gate Resistance f = 1 MHz 2 10 20 g t Turn-On Delay Time 24 36 d(on) Rise Time t 22 40 V = - 10 V, R = 3.1 r DD L I - 3.2 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 52 78 d(off) Fall Time t 11 20 f ns t Turn-On Delay Time 816 d(on) Rise Time t 918 V = - 10 V, R = 3.1 r DD L I - 3.2 A, V = - 8 V, R = 1 t Turn-Off Delay Time D GEN g 58 87 d(off) Fall Time t 918 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 1.4 S C A I Pulse Diode Forward Current - 20 SM V I = - 3.2 A, V = 0 V Body Diode Voltage - 0.79 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 14 25 ns rr Q Body Diode Reverse Recovery Charge 612 nC rr I = - 3.2 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 8 a ns Reverse Recovery Rise Time t 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 64004 2 S13-1165-Rev. A, 13-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000