X-On Electronics has gained recognition as a prominent supplier of SI2325DS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2325DS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2325DS-T1-GE3 Vishay

Hot SI2325DS-T1-GE3 electronic component of Vishay
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Part No.SI2325DS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -150V Vds 20V Vgs SOT-23
Datasheet: SI2325DS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5874 ea
Line Total: USD 0.59 
Availability - 9969
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9969
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5874
10 : USD 0.4656
30 : USD 0.4132
100 : USD 0.3483
500 : USD 0.321
1000 : USD 0.3021

13321
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1075
10 : USD 0.8039
100 : USD 0.5819
500 : USD 0.4818
1000 : USD 0.4508
3000 : USD 0.4313
6000 : USD 0.4174
24000 : USD 0.4163

23280
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.4852
6000 : USD 0.4663
24000 : USD 0.4624

   
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We are delighted to provide the SI2325DS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2325DS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si2325DS Vishay Siliconix P-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Available 1.2 at V = - 10 V - 0.69 GS TrenchFET Power MOSFET - 150 7.7 1.3 at V = - 6.0 V - 0.66 GS Ultra Low On-Resistance Small Size APPLICATIONS Active Clamp Circuits in DC/DC Power Supplies TO-236 (SOT-23) G 1 3 D S 2 Top View Si2325DS (D5)* * Marking Code Ordering Information: Si2325DS -T1-E3 (Lead (Pb)-free) Si2325DS -T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage - 150 DS V Gate-Source Voltage V 20 GS T = 25 C - 0.69 - 0.53 A a, b I Continuous Drain Current (T = 150 C) D J T = 70 C - 0.55 - 0.43 A I Pulsed Drain Current - 1.6 A DM a, b I - 1.0 - 0.6 Continuous Source Current (Diode Conduction) S Single Pulse Avalanche Current I 4.5 AS L = 1.0 mH E Single Pulse Avalanche Energy 1.01 mJ AS T = 25 C 1.25 0.75 A a, b P W Maximum Power Dissipation D T = 70 C 0.8 0.48 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 75 100 a R Maximum Junction-to-Ambient thJA Steady State 120 166 C/W R Maximum Junction-to-Foot (Drain) Steady State 40 50 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 73238 www.vishay.com S09-0133-Rev. B, 02-Feb-09 1Si2325DS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Limits Parameter Symbol Test Conditions Unit Min. Typ. Max. Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 150 (BR)DSS GS D V V V = V , I = - 250 A Gate-Threshold Voltage - 2.5 - 4.5 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 150 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 150 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 15 V, V = 10 V - 1.6 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 0.5 A 1.0 1.2 GS D a R Drain-Source On-Resistance DS(on) V = - 6.0 V, I = - 0.5 A 1.05 1.3 GS D a g V = - 15 V, I = - 0.5 A 2.2 S Forward Transconductance fs DS D V I = - 1.0 A, V = 0 V Diode Forward Voltage 0.7 - 1.2 V SD S GS b Dynamic Total Gate Charge Q 7.7 12 g V = - 75 V, V = 10 V, DS GS Q Gate-Source Charge 1.5 nC gs I - 0.5 A D Gate-Drain Charge Q 2.5 gd R Gate Resistance f = 1.0 MHz 9 g C Input Capacitance 340 510 iss C V = - 25 V, V = 0 V, f = 1 MHz Output Capacitance 30 pF oss DS GS C Reverse Transfer Capacitance 16 rss c Switching t 711 d(on) Turn-On Time V = - 75 V, R = 75 DD L t 11 17 r I - 1.0 A, V = - 10 V ns D GEN t 16 25 d(off) R = 6 Turn-Off Time g t 11 17 f Q I = 0.5 A, dI/dt = 100 A/s Body Diode Reverse Recovery Charge 90 135 nC rr F Notes: a. Pulse test: PW 300 s duty cycle 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73238 2 S09-0133-Rev. B, 02-Feb-09

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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