Si2314EDS Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.033 at V = 4.5 V 4.9 GS TrenchFET Power MOSFET 0.040 at V = 2.5 V 20 4.4 GS ESD Protected: 3000 V 0.051 at V = 1.8 V 3.9 GS APPLICATIONS LI-lon Battery Protection TO-236 D (SOT-23) G 1 3 D 3 k S 2 G Top View Si2314EDS (C4)* *Marking Code S N-Channel Ordering Information: Si2314EDS-T1-E3 (Lead (Pb)-free) Si2314EDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage 20 DS V Gate-Source Voltage V 12 GS T = 25 C 4.9 3.77 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 3.9 3.0 A A b I 15 Pulsed Drain Current DM b I 15 Avalanche Current AS L = 0.1 mH E Single Avalanche Energy 11.25 mJ AS a I 1.0 A Continuous Source Current (Diode Conduction) S T = 25 C 1.25 0.75 A a P W Power Dissipation D T = 70 C 0.80 0.48 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 75 100 a R Maximum Junction-to-Ambient thJA Steady State 120 166 C/W R Maximum Junction-to-Foot Steady State 40 50 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71611 www.vishay.com S09-0130-Rev. D, 02-Feb-09 1Si2314EDS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted A Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 DS GS D V V V = V , I = 250 A Gate-Threshold Voltage 0.45 0.95 GS(th) DS GS D I V = 0 V, V = 4.5 V Gate-Body Leakage 1.5 GSS DS GS V = 20 V, V = 0 V 1 A DS GS Zero Gate Voltage Drain Current I DSS V = 20 V, V = 0 V, T = 70 C 75 DS GS J a I V 10 V, V = 4.5 V 15 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 5.0 A 0.027 0.033 GS D a R V = 2.5 V, I = 4.5 A 0.033 0.040 Drain-Source On-Resistance DS(on) GS D V = 1.8 V, I = 4.0 A 0.042 0.051 GS D a g V = 15 V, I = 5.0 A 40 S Forward Transconductance fs DS D V I = 1.0 A, V = 0 V Diode Forward Voltage 0.8 1.2 V SD S GS b Dynamic Q Total Gate Charge 11.0 14.0 g Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 5.0 A 1.5 nC gs DS GS D Q Gate-Drain Charge 2.1 gd Switching t Turn-On Delay Time 0.53 0.8 d(on) t Rise Time V = 10 V, R = 10 1.4 2.2 r DD L s I 1.0 A, V = 4.5 V, R = 6 t Turn-Off Delay Time D GEN g 13.5 20 d(off) t Fall Time 5.9 9 f t I = 1.0 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 13 25 ns rr F Notes: a. Pulse test: PW 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1200 10 000 1000 1000 100 800 10 600 1 T = 150 C J 0.1 400 T = 25 C J 0.01 200 0.001 0 0.0001 02468 10 12 0.1 1 10 100 V - Gate-to-Source Voltage (V) GS V - Gate-to-Source Voltage (V) GS Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage www.vishay.com Document Number: 71611 2 S09-0130-Rev. D, 02-Feb-09 I - Gate Current (mA) GSS I - Gate Current (A) GSS