Si2316DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available V (V) R ()I (A) DS DS(on) D Pb-free TrenchFET Power MOSFET 0.050 at V = 10 V 3.4 GS Available 30 0.085 at V = 4.5 V 2.6 RoHS* GS APPLICATIONS COMPLIANT Battery Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2316DS (C6)* * Marking Code Ordering Information: Si2316DS-T1 Si2316DS-T1-E3 (Lead (Pb)-free) Si2316DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 20 GS T = 25 C 3.4 2.9 A a, b I Continuous Drain Current (T = 150 C) D J T = 70 C 2.7 2.3 A A b I 16 Pulsed Drain Current DM a, b I 0.8 Continuous Source Current (Diode Conduction) S T = 25 C 0.96 0.7 A a, b P W Power Dissipation D T = 70 C 0.6 0.45 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 100 130 a R Maximum Junction-to-Ambient thJA Steady State 140 175 C/W R Maximum Junction-to-Foot (Drain) Steady State 60 75 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Pulse width limited by maximum junction temperature. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71798 www.vishay.com S-80642-Rev. C, 24-Mar-08 1Si2316DS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted A Limits Parameter Symbol Test Conditions Unit Min. Typ. Max. Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 (BR)DSS GS D V V V = V , I = 250 A Gate-Threshold Voltage 0.8 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 0.5 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J V 4.5 V, V = 10 V 6 DS GS a I A On-State Drain Current D(on) V 4.5 V, V = 4.5 V 4 DS GS V = 10 V, I = 3.4 A 0.042 0.050 GS D a R Drain-Source On-Resistance DS(on) V = 4.5 V, I = 2.6 A 0.068 0.085 GS D a g V = 4.5 V, I = 3.4 A 6.0 S Forward Transconductance fs DS D Diode Forward Voltage V I = 0.8 A, V = 0 V 0.8 1.2 V SD S GS b Dynamic Q Total Gate Charge 4.3 7 g Q V = 15 V, V = 10 V, I = 3.4 A Gate-Source Charge 0.65 nC gs DS GS D Q Gate-Drain Charge 1.2 gd C Input Capacitance 215 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 90 pF oss DS GS Reverse Transfer Capacitance C 55 rss Switching t Turn-On Delay Time 915 d(on) Rise Time t 915 V = 15 V, R = 15 r DD L ns I 1.0 A, V = 10 V, R = 6 t Turn-Off Delay Time D GEN G 14 20 d(off) Fall Time t 612 f Notes: a. Pulse test PW 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 16 16 V = 10 thru 5 V GS 14 14 12 12 4 V 10 10 8 8 6 6 3 V 4 4 T = 125 C C 2 2 25 C - 55 C 2 V 0 0 02468 10 012345 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Transfer Characteristics Output Characteristics www.vishay.com Document Number: 71798 2 S-80642-Rev. C, 24-Mar-08 I - Drain Current (A) D I - Drain Current (A) D