ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. Channel Logic Level ) GS R ON Semiconductor ) GS R ) GS s . 2 S G D T = 25C unless otherwise noted C V V V V A I D P C W D C C C W/ T J 1997 Semiconductor Components Industries, LLC. Publication Order Number: September-2017, Rev. 3 NDP6020P/D STG C -65 to 175 Operating and Storage Temperature Range ,T 0.4 Derate above 25 60 = 25 Total Power Dissipation T -70 - Pulsed -24 - Continuous Drain Current GSS 8 Gate-Source Voltage - Continuous DSS -20 Drain-Source Voltage Units NDB6020P NDP6020P Parameter Symbol Absolute Maximum Ratings hole and surface mount applications. PAK) package for both through TO-220 and TO-263 (D needed. DS(ON) High density cell design for extremely low R are transients to resistance and loss, power in-line low switching, fas t where circuits powered battery other and 175C maximum junction temperature rating. controls, motor PWM converters, DC/DC automotive, as for an external Zener diode transient suppressor. such applications voltage low for uited partic ularly are devices These modes. commutation and avalanche the Rugged internal source-drain diode can eliminate the need in pulses energy high withstand and performance, temperature. switc hing superior provide resistance, on-state minimize Critical DC electrical parameters specified at elevated to tailored especially been has process density high very This technology. DMOS density, cell high proprietary, DS(ON = -2.5 V. V = 0.075 DS(ON s using produced are transistors effect = -2.7 V. V = 0.07 DS(ON field power enhancement P-Channel mode level logic These = -4.5 V. V = 0.05 -24 A, -20 V. R Features General Description Enhancement Mode Field Effect Transistor P- NDP6020P / NDB6020P