NDC7003P May 2002 NDC7003P Dual P-Channel PowerTrench MOSFET General Description Features These dual P-Channel Enhancement Mode Power Field 0.34A, 60 V. R = 5 V = 10 V DS(ON) GS Effect Transistors are produced using Fairchilds R = 7 V = 4.5 V DS(ON) GS proprietary Trench Technology. This very high density process has been designed to minimize on-state Low gate charge resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to Fast switching speed low voltage applications requiring a low current high side switch. High performance trench technology for low RDS(ON) TM SuperSOT -6 package: small footprint (72% smaller than standard SO-8) low profile (1mm thick) D2 S1 4 3 D1 5 2 G2 6 1 S2 TM SuperSOT -6 G1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 60 V DSS V Gate-Source Voltage 20 V GSS I Drain Current Continuous (Note 1a) 0.34 A D Pulsed 1 Power Dissipation for Single Operation (Note 1a) 0.96 P W D (Note 1b) 0.9 (Note 1c) 0.7 T , T Operating and Storage Junction Temperature Range 55 to +150 J STG C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 130 RJA C/W R Thermal Resistance, Junction-to-Case (Note 1) 60 JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .03P NDC7003P 7 8mm 3000 units 2002 Fairchild Semiconductor Corporation NDC7003P Rev B(W) NDC7003P Electrical Characteristics T = 25C unless otherwise noted A Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DrainSource Breakdown Voltage V = 0 V, I = 250 A 60 V DSS GS D BVDSS Breakdown Voltage Temperature I = 250 A, Referenced to 25C 57 mV/C D Coefficient TJ I Zero Gate Voltage Drain Current V = 48 V, V = 0 V 1 A DSS DS GS I GateBody Leakage, V = 20 V, V = 0 V 100 nA GSS GS DS On Characteristics (Note 2) V Gate Threshold Voltage V = V , I = 250 A 1 1.9 3.5 V GS(th) DS GS D VGS(th) Gate Threshold Voltage 3.2 mV/C I = 250 A, Referenced to 25C D T Temperature Coefficient J V = 10 V, I = 0.34 A R Static DrainSource GS D 1.2 5 DS(on) OnResistance V = 4.5 V, I = 0.25 A GS D 1.5 7.5 V = 10 V,I = 0.34 A, T =125C 1.9 10 GS D J V = 10 V V = 10 V I On-State Drain Current GS DS 1 A D(on) g Forward Transconductance V = 10 V, I = 0.34 A 700 mS FS DS D Dynamic Characteristics C Input Capacitance 66 pF iss V = 25 V, V = 0 V, DS GS C Output Capacitance f = 1.0 MHz 13 pF oss C Reverse Transfer Capacitance rss 6 pF R Gate Resistance V = 15mV, f = 1.0 MHz 11.2 G GS Switching Characteristics (Note 2) t TurnOn Delay Time 3.2 6.4 ns d(on) V = 25 V, I = 1 A, DD D V = 10 V, R = 6 GS GEN t TurnOn Rise Time 10 20 ns r t TurnOff Delay Time 8 16 ns d(off) tf TurnOff Fall Time 1 2 ns Q Total Gate Charge 1.6 2.2 nC g V = 25 V, I = 0.34 A, DS D V = 10 V GS Q GateSource Charge 0.3 nC gs Q GateDrain Charge 0.3 nC gd DrainSource Diode Characteristics and Maximum Ratings IS Maximum Continuous DrainSource Diode Forward Current 0.34 A V DrainSource Diode Forward V = 0 V, I = 0.34 A(Note 2) V SD GS S 0.8 1.4 Voltage Notes: 1. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of JA the drain pins. R is guaranteed by design while R is determined by the user s board design. JC CA a) 130 C/W when b) 140C/W when mounted c) 180C/W when mounted on a mounted on a 0.125 2 2 on a .005 in pad of 2 oz in pad of 2 oz. minimum pad. copper copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% NDC7003P Rev B(W)