X-On Electronics has gained recognition as a prominent supplier of BSS87.115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS87.115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS87.115 Nexperia

BSS87.115 electronic component of Nexperia
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Part No.BSS87.115
Manufacturer: Nexperia
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 200V; 0.2A; 580mW; SOT89
Datasheet: BSS87.115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.462 ea
Line Total: USD 0.46 
Availability - 237
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
237
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.462
10 : USD 0.364
50 : USD 0.266
71 : USD 0.2478
100 : USD 0.231

   
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Product Category
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Type Of Transistor
Drain-Source Voltage
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On-State Resistance
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We are delighted to provide the BSS87.115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS87.115 and other electronic components in the MOSFETs category and beyond.

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BSS87.115 is a PNP silicon transistor manufactured by Nexperia. It is used as a switching and amplification device in many electronic circuits. It is an epitaxial-base transistor, meaning it has its controlled base region epitaxially grown onto the semiconductor material beneath the base contact. This allows for a better control of the current conduction inside the transistor. It is rated with a maximum collector-emitter voltage of 60 volts and a maximum collector current of 600 milliamps. It also has a maximum operating temperature of 175°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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