NDD03N80Z NChannel Power MOSFET 800 V, 4.5 Features ESD DiodeProtected Gate 100% Avalanche Tested NDD03N80Z THERMAL RESISTANCE Parameter Symbol Value Unit JunctiontoCase (Drain) NDD03N80Z R 1.3 C/W JC JunctiontoAmbient Steady State (Note 3) NDD03N80Z R 33 JA (Note 2) NDD03N80Z1 96 2. Insertion mounted 3. Surface mounted on FR4 board using 1 sq. pad size (Cu area = 1.127 sq 2 oz including traces). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V V =0V, I =1mA 800 V (BR)DSS GS D Drain-to-Source Breakdown Voltage V /T Reference to 25C, I = 1 mA 870 mV/C (BR)DSS J D Temperature Coefficient DraintoSource Leakage Current I V = 800 V, V =0V T =25C 1.0 A DSS DS GS J T = 125C 50 J Gate-to-Source Leakage Current I V = 20 V 10 A GSS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V =V , I =50 A 3.0 4.1 4.5 V GS(TH) DS GS D Negative Threshold Temperature V /T Reference to 25C, I = 50 A 11 mV/C GS(TH) J D Coefficient Static Drain-to-Source On Resistance R V =10V, I = 1.2 A 3.7 4.5 DS(ON) GS D Forward Transconductance g V =15V, I = 1.2 A 2.1 S FS DS D DYNAMIC CHARACTERISTICS Input Capacitance (Note 5) C 440 pF iss Output Capacitance (Note 5) C 52 oss V =25V, V = 0 V, f = 1 MHz DS GS Reverse Transfer Capacitance C 9.0 rss (Note 5) Total Gate Charge (Note 5) Q 17 nC g Gate-to-Source Charge (Note 5) Q 3.5 gs V = 400 V, I = 3.3 A, V =10V Gate-to-Drain (Miller) Charge Q DS D GS 9.1 gd (Note 5) Plateau Voltage V 6.5 V GP Gate Resistance R 5.5 g RESISTIVE SWITCHING CHARACTERISTICS (Note 6) ns Turn-on Delay Time t 9.0 d(on) Rise Time t 7.0 r V = 400 V, I = 3.3 A, DD D V =10V, R = 0 GS G Turn-off Delay Time t 17 d(off) Fall Time t 9.0 f SOURCEDRAIN DIODE CHARACTERISTICS Diode Forward Voltage V T =25C 0.9 1.6 V SD J I = 3.0 A, V =0V S GS T = 100C 0.8 J Reverse Recovery Time t 360 ns rr Charge Time t 81 a V =0V, V =30V GS DD I = 3.3 A, d /d = 100 A/ s S i t Discharge Time t 280 b Reverse Recovery Charge Q 1.3 C rr 4. Pulse Width 380 s, Duty Cycle 2%. 5. Guaranteed by design. 6. Switching characteristics are independent of operating junction temperatures.