X-On Electronics has gained recognition as a prominent supplier of NDD03N80Z-1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NDD03N80Z-1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NDD03N80Z-1G ON Semiconductor

NDD03N80Z-1G electronic component of ON Semiconductor
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Part No.NDD03N80Z-1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK
Datasheet: NDD03N80Z-1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 844
Multiples : 844
844 : USD 0.4986
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.0238
75 : USD 0.8647
525 : USD 0.5463
1050 : USD 0.5012
2850 : USD 0.4727
5700 : USD 0.4608
11400 : USD 0.4525
25650 : USD 0.4371
N/A

Obsolete
   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Package Case
Brand
Id Continuous Drain Current
Rds On Drain Source Resistance
Factory Pack Quantity :
Vds Drain Source Breakdown Voltage
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NDD03N80Z-1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NDD03N80Z-1G and other electronic components in the MOSFETs category and beyond.

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NDD03N80Z NChannel Power MOSFET 800 V, 4.5 Features ESD DiodeProtected Gate 100% Avalanche Tested NDD03N80Z THERMAL RESISTANCE Parameter Symbol Value Unit JunctiontoCase (Drain) NDD03N80Z R 1.3 C/W JC JunctiontoAmbient Steady State (Note 3) NDD03N80Z R 33 JA (Note 2) NDD03N80Z1 96 2. Insertion mounted 3. Surface mounted on FR4 board using 1 sq. pad size (Cu area = 1.127 sq 2 oz including traces). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V V =0V, I =1mA 800 V (BR)DSS GS D Drain-to-Source Breakdown Voltage V /T Reference to 25C, I = 1 mA 870 mV/C (BR)DSS J D Temperature Coefficient DraintoSource Leakage Current I V = 800 V, V =0V T =25C 1.0 A DSS DS GS J T = 125C 50 J Gate-to-Source Leakage Current I V = 20 V 10 A GSS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V =V , I =50 A 3.0 4.1 4.5 V GS(TH) DS GS D Negative Threshold Temperature V /T Reference to 25C, I = 50 A 11 mV/C GS(TH) J D Coefficient Static Drain-to-Source On Resistance R V =10V, I = 1.2 A 3.7 4.5 DS(ON) GS D Forward Transconductance g V =15V, I = 1.2 A 2.1 S FS DS D DYNAMIC CHARACTERISTICS Input Capacitance (Note 5) C 440 pF iss Output Capacitance (Note 5) C 52 oss V =25V, V = 0 V, f = 1 MHz DS GS Reverse Transfer Capacitance C 9.0 rss (Note 5) Total Gate Charge (Note 5) Q 17 nC g Gate-to-Source Charge (Note 5) Q 3.5 gs V = 400 V, I = 3.3 A, V =10V Gate-to-Drain (Miller) Charge Q DS D GS 9.1 gd (Note 5) Plateau Voltage V 6.5 V GP Gate Resistance R 5.5 g RESISTIVE SWITCHING CHARACTERISTICS (Note 6) ns Turn-on Delay Time t 9.0 d(on) Rise Time t 7.0 r V = 400 V, I = 3.3 A, DD D V =10V, R = 0 GS G Turn-off Delay Time t 17 d(off) Fall Time t 9.0 f SOURCEDRAIN DIODE CHARACTERISTICS Diode Forward Voltage V T =25C 0.9 1.6 V SD J I = 3.0 A, V =0V S GS T = 100C 0.8 J Reverse Recovery Time t 360 ns rr Charge Time t 81 a V =0V, V =30V GS DD I = 3.3 A, d /d = 100 A/ s S i t Discharge Time t 280 b Reverse Recovery Charge Q 1.3 C rr 4. Pulse Width 380 s, Duty Cycle 2%. 5. Guaranteed by design. 6. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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