X-On Electronics has gained recognition as a prominent supplier of NDPL180N10BG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NDPL180N10BG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NDPL180N10BG ON Semiconductor

NDPL180N10BG electronic component of ON Semiconductor
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See Product Specifications
Part No.NDPL180N10BG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET NCH 180A 100V
Datasheet: NDPL180N10BG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.0116
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.7373
10 : USD 2.3285
100 : USD 1.8642
500 : USD 1.6355
1000 : USD 1.3897
2500 : USD 1.3897
5000 : USD 1.3897
10000 : USD 1.3459
25000 : USD 1.2912
N/A

Obsolete
0
MOQ : 8
Multiples : 1
8 : USD 1.0116
N/A

Obsolete
0
MOQ : 8
Multiples : 8
8 : USD 1.0116
N/A

Obsolete
   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
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Forward Transconductance Min
Fall Time
Id Continuous Drain Current
Pd Power Dissipation
Qg Gate Charge
Rds On Drain Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn Off Delay Time
Typical Turn On Delay Time
Vds Drain Source Breakdown Voltage
Vgs Gate Source Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
Forward Transconductance - Min
Cnhts
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Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the NDPL180N10BG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NDPL180N10BG and other electronic components in the MOSFETs category and beyond.

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NDPL180N10B Power MOSFET 100V, 3.0m , 180A, N-Channel www.onsemi.com Features Ultra Low On-Resistance V R (on) Max I DSS DS D Max Low Gate Charge 3.0m 15V High Speed Switching 100V 180A 3.5m 10V 100% Avalanche Test Pb-Free and RoHS compliance Electrical Connection Specifications Absolute Maximum Ratings at Ta = 25C (Note 1) N-Channel Unit Parameter Symbol Value 2 V Drain to Source Voltage V 100 DSS V Gate to Source Voltage V 20 GSS Drain Current (DC) I 180 A D A 1:Gate Drain Current (DC) Limited by Package I 100 DL 1 2:Drain Drain Current (Pulse) 3:Source I 600 A DP PW 10s, duty cycle1% Power Dissipation 2.1 P W D Tc=25 C 200 3 Tj 175 C Junction Temperature Storage Temperature Tstg 55 to +175 C Marking Source Current (Body Diode) I 100 A S E 451 mJ Avalanche Energy (Single Pulse) (Note 2) AS Lead Temperature for Soldering T 260 C L 180N10 Purposes, 3mm from Case for 10 Seconds Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage LOTNo. the device. If any of these limits are exceeded, device functionality should not B be assumed, damage may occur and reliability may be affected. 2 : V =48V, L=100 H, I =70A (Fig.1) DD AV 1 TO-220-3L 2 3 Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Case Steady State R 0.75 JC C/W Junction to Ambient (Note 3) R 71.4 JA Note 3 : Insertion mounted ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : January 2016 - Rev. 4 NDPL180N10B/D NDPL180N10B Electrical Characteristics at Ta 25C (Note 4) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =10mA, V=0V 100 V BR DSS D GS Zero-Gate Voltage Drain Current I V =100V, V=0V 10 A DSS DS GS Gate to Source Leakage Current I V =20V, V=0V 200 nA GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 2 4 V GS DS D Forward Transconductance g V =10V, I=50A 150 S FS DS D R (on)1 I =50A, V=15V 2.5 3.0 m DS D GS Static Drain to Source On-State Resistance R(on)2 I =50A, V=10V 2.7 3.5 m DS D GS Input Capacitance Ciss 6,950 pF Output Capacitance Coss V =50V, f=1MHz 3,000 pF DS Reverse Transfer Capacitance Crss 15 pF Turn-ON Delay Time t (on) 95 ns d Rise Time t 320 ns r See Fig.2 Turn-OFF Delay Time t (off) 185 ns d Fall Time t 130 ns f Total Gate Charge Qg 95 nC Gate to Source Charge Qgs V =48V, V =10V, I =100A 31 nC DS GS D Gate to Drain Miller Charge Qgd 26 nC Forward Diode Voltage V I =100A, V=0V 0.9 1.5 V SD S GS Reverse Recovery Time t See Fig.3 150 ns rr Reverse Recovery Charge Q I =100A, V =0V, V =50V, di/dt=100A/ s 580 nC rr S GS DD Note 4 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Test Circuit D NDPL180N10B L G S V DD DriverMOSFET www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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