NDPL180N10B Power MOSFET 100V, 3.0m , 180A, N-Channel www.onsemi.com Features Ultra Low On-Resistance V R (on) Max I DSS DS D Max Low Gate Charge 3.0m 15V High Speed Switching 100V 180A 3.5m 10V 100% Avalanche Test Pb-Free and RoHS compliance Electrical Connection Specifications Absolute Maximum Ratings at Ta = 25C (Note 1) N-Channel Unit Parameter Symbol Value 2 V Drain to Source Voltage V 100 DSS V Gate to Source Voltage V 20 GSS Drain Current (DC) I 180 A D A 1:Gate Drain Current (DC) Limited by Package I 100 DL 1 2:Drain Drain Current (Pulse) 3:Source I 600 A DP PW 10s, duty cycle1% Power Dissipation 2.1 P W D Tc=25 C 200 3 Tj 175 C Junction Temperature Storage Temperature Tstg 55 to +175 C Marking Source Current (Body Diode) I 100 A S E 451 mJ Avalanche Energy (Single Pulse) (Note 2) AS Lead Temperature for Soldering T 260 C L 180N10 Purposes, 3mm from Case for 10 Seconds Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage LOTNo. the device. If any of these limits are exceeded, device functionality should not B be assumed, damage may occur and reliability may be affected. 2 : V =48V, L=100 H, I =70A (Fig.1) DD AV 1 TO-220-3L 2 3 Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Case Steady State R 0.75 JC C/W Junction to Ambient (Note 3) R 71.4 JA Note 3 : Insertion mounted ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : January 2016 - Rev. 4 NDPL180N10B/D NDPL180N10B Electrical Characteristics at Ta 25C (Note 4) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =10mA, V=0V 100 V BR DSS D GS Zero-Gate Voltage Drain Current I V =100V, V=0V 10 A DSS DS GS Gate to Source Leakage Current I V =20V, V=0V 200 nA GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 2 4 V GS DS D Forward Transconductance g V =10V, I=50A 150 S FS DS D R (on)1 I =50A, V=15V 2.5 3.0 m DS D GS Static Drain to Source On-State Resistance R(on)2 I =50A, V=10V 2.7 3.5 m DS D GS Input Capacitance Ciss 6,950 pF Output Capacitance Coss V =50V, f=1MHz 3,000 pF DS Reverse Transfer Capacitance Crss 15 pF Turn-ON Delay Time t (on) 95 ns d Rise Time t 320 ns r See Fig.2 Turn-OFF Delay Time t (off) 185 ns d Fall Time t 130 ns f Total Gate Charge Qg 95 nC Gate to Source Charge Qgs V =48V, V =10V, I =100A 31 nC DS GS D Gate to Drain Miller Charge Qgd 26 nC Forward Diode Voltage V I =100A, V=0V 0.9 1.5 V SD S GS Reverse Recovery Time t See Fig.3 150 ns rr Reverse Recovery Charge Q I =100A, V =0V, V =50V, di/dt=100A/ s 580 nC rr S GS DD Note 4 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Test Circuit D NDPL180N10B L G S V DD DriverMOSFET www.onsemi.com 2