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This literature is subject to all applicable copyright laws and is not for resale in any manner.HUF76429S3S Data Sheet October 2013 N-Channel Logic Level UltraFET Power MOSFET 60 V, 44 A, 25 m Packaging Features JEDEC TO-263AB Ultra Low On-Resistance -r = 0.022, V = 10V GS DS(ON) DRAIN (FLANGE) -r = 0.025, V = 5V GS DS(ON) Simulation Models GATE - Temperature Compensated PSPICE and SABER Electrical Models SOURCE - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Peak Current vs Pulse Width Curve UIS Rating Curve Symbol Switching Time vs R Curves GS D Ordering Information PART NUMBER PACKAGE BRAND G HUF76429S3ST TO- 263AB 76429S S o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified C HUF76429S3S T UNITS Drain to Source Voltage (Note 1) . V 60 V DSS Drain to Gate Voltage (R = 20k ) (Note 1) . V 60 V GS DGR Gate to Source Voltage . V 16 V GS Drain Current o Continuous (T = 25 C, V = 5V) I 44 A C GS D o Continuous (T = 25 C, V = 10V) (Figure 2) . I 47 A C GS D o Continuous (T = 100 C, V = 5V) . I 31 A C GS D o Continuous (T = 100 C, V = 4.5V) (Figure 2) . I 30 A C GS D Pulsed Drain Current I Figure 4 DM Pulsed Avalanche Rating UIS Figures 6, 17, 18 Power Dissipation P 110 W D o o Derate Above 25 C 0.74 W/ C o Operating and Storage Temperature . T , T -55 to 175 C J STG Maximum Temperature for Soldering o Leads at 0.063in (1.6mm) from Case for 10s . T 300 C L o Package Body for 10s, See Techbrief TB334 . T 260 C pkg NOTES: o o 1. T = 25 C to 150 C. J CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Product reliability information can be found at