NTA4151P, NTE4151P MOSFET Single, P-Channel, Small Signal, Gate Zener, SC-75, SC-89 -20 V, -760 mA www.onsemi.com Features V R TYP I MAX Low R for Higher Efficiency and Longer Battery Life (BR)DSS DS(on) D DS(on) Small Outline Package (1.6 x 1.6 mm) 0.26 4.5 V SC75 Standard Gullwing Package 20 V 0.35 2.5 V 760 mA ESD Protected Gate 0.49 1.8 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant PChannel MOSFET Applications D High Side Load Switch DCDC Conversion Small Drive Circuits Battery Operated Systems such as Cell Phones, PDAs, Digital Cameras, etc. G MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Units S DraintoSource Voltage V 20 V DSS GatetoSource Voltage V 6.0 V MARKING DIAGRAM GS & PIN ASSIGNMENT Continuous Drain Current Steady State I 760 mA D (Note 1) 3 Power Dissipation (Note 1) P mW D SC75 Steady State 301 2 SC89 313 3 1 Drain SC75 / SOT416 Pulsed Drain Current tp =10 s I 1000 mA DM CASE 463 Operating Junction and Storage Temperature T , 55 to STYLE 5 J C xx M T 150 STG 3 Continuous Source Current (Body Diode) I 250 mA S 2 1 Lead Temperature for Soldering Purposes 260 C T L 2 Source (1/8 in from case for 10 s) Gate 1 SC89 GatetoSource ESD Rating ESD 1800 V CASE 463C (Human Body Model, Method 3015) THERMAL RESISTANCE RATINGS JunctiontoAmbient Steady State (Note 1) R C/W xx = Device Code JA 415 M = Date Code* SC75 400 SC89 = PbFree Package (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be *Date Code orientation may vary depending up- assumed, damage may occur and reliability may be affected. on manufacturing location. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: May, 2019 Rev. 8 NTA4151P/DNTA4151P, NTE4151P ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D Zero Gate Voltage Drain Current I V = 0 V, V = 16 V 1.0 100 nA DSS GS DS GatetoSource Leakage Current I V = 0 V, V = 4.5 V 1.0 10 A GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 0.45 1.2 V GS(TH) DS GS D DraintoSource On Resistance R V = 4.5 V, I = 350 mA 0.26 0.36 DS(on) GS D V = 2.5 V, I = 300 mA 0.35 0.45 GS D V = 1.8 V, I = 150 mA 0.49 1.0 GS D Forward Transconductance g V = 10 V, I = 250 mA 0.4 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C V = 0 V, f = 1.0 MHz, 156 pF ISS GS V = 5.0 V DS Output Capacitance C 28 OSS Reverse Transfer Capacitance C 18 RSS Total Gate Charge Q V = 4.5 V, V = 10 V, 2.1 nC G(TOT) GS DD I = 0.3 A D Threshold Gate Charge Q 0.125 G(TH) GatetoSource Charge Q 0.325 GS GatetoDrain Charge Q 0.5 GD SWITCHING CHARACTERISTICS (Note 3) V = 4.5 V, V = 10 V, ns TurnOn Delay Time td 8.0 (ON) GS DD I = 200 mA, R = 10 D G Rise Time t 8.2 r TurnOff Delay Time td 29 (OFF) Fall Time t 20.4 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, I = 250 mA 0.72 1.1 V SD GS S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Marking Package Shipping NTA4151PT1G TN SC75 3000 / Tape & Reel (PbFree) NTE4151PT1G TM SC89 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2