DATA SHEET www.onsemi.com MOSFET - Power, I MAX D V R MAX (Note 1) (BR)DSS DS(ON) N-Channel 100 V 4.2 m 10 V 201 A 100 V, 4.2 m , 201 A NTB004N10G NChannel D Features Low R DS(on) High Current Capability G Wide SOA These Devices are PbFree and are RoHS Compliant S Applications Hot Swap in 48 V Systems MAXIMUM RATINGS (T = 25C Unless otherwise specified) J Parameter Symbol Value Unit 2 D PAK DraintoSource Voltage V 100 V DSS CASE 418AJ GatetoSource Voltage Continuous V 20 V GS STYLE 2 Continuous Drain Steady T = 25C I 201 A D C Current R State JC T = 100C 142 C MARKING DIAGRAM Power Dissipation Steady T = 25C P 340 W C D & PIN ASSIGNMENT State R JC 4 Pulsed Drain Current t = 10 s I 3002 A p DM Drain Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 AYWWZZ Source Current (Body Diode) I 283 A S NTB 004N10G Single Pulse DraintoSource Avalanche E 520 mJ AS Energy (V = 50 Vdc, V = 10 Vdc, DD GS I = 102 A, L = 0.1 mH, R = 25 ) L(pk) G 2 1 3 Drain Lead Temperature for Soldering T 260 C Gate Source L Purposes, 1/8 from Case for 10 Seconds A = Assembly Site Code THERMAL RESISTANCE RATINGS Y = Year Code WW = Week Code Parameter Symbol Max Unit ZZ = 2digit Assembly Lot Code NTB004N10G = Specific Device Code JunctiontoCase (Drain) Steady State R 0.44 C/W JC JunctiontoAmbient (Note 1) R 62.5 JA Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information in the package assumed, damage may occur and reliability may be affected. dimensions section on page 5 of this data sheet. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in 2 oz including traces). Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: January, 2022 Rev. 4 NTB004N10G/DNTB004N10G ELECTRICAL CHARACTERISTICS (T = 25C Unless otherwise specified) J Characteristics Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage Temper- V /T 83.2 mV/C (BR)DSS J ature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 80 V DS T = 150C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 500 A 2.0 2.8 4.0 V GS(th) GS DS D Negative Threshold Temperature Coefficient V /T 10.5 mV/C GS(th) J DraintoSource OnResistance R V = 10 V, I T = 25C 3.4 4.2 m DS(on) GS D J = 100 A T = 175C 6.82 m J Forward Transconductance g V = 10 V, I = 100 A 70 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 11900 pF iss V = 50 V, V = 0 V, DS GS Output Capacitance C 1170 oss f = 1 MHz Reverse Transfer Capacitance C 147 rss Total Gate Charge Q 175 nC G(TOT) Threshold Gate Charge Q 78.4 G(TH) V = 10 V, V = 50 V, GS DS GatetoSource Charge Q 67.3 GS I = 100 A D GatetoDrain Charge Q 40.8 GD Plateau Voltage V 6.0 V GP Gate Resistance R V = 100 mV, V = 0 V, 0.445 G OSC GS f = 1 MHz SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS TurnOn Delay Time t 43 ns d(on) Rise Time t 64.5 r V = 10 V, V = 50 V, GS DD I = 100 A, R = 4.7 D G TurnOff Delay Time t 84.7 d(off) Fall Time t 30 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.9 1.2 V SD J I = 100 A S T = 125C 0.77 J Reverse Recovery Time t 76.6 ns rr Charge Time t 46.4 a V = 0 V, I = 100 A, GS S dI /dt = 100 A/ s SD Discharge Time t 30.2 b Reverse Recovery Charge Q 157 nC RR 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2