MOSFET SiC Power, Single N-Channel, TO247-4L 1200 V, 40 m , 58 A NTH4L040N120SC1 Features Typ. R = 40 m DS(on) www.onsemi.com Ultra Low Gate Charge (Q = 106 nC) G(tot) High Speed Switching with Low Capacitance (C = 137 pF) oss V R MAX I MAX (BR)DSS DS(ON) D 100% Avalanche Tested 1200 V 56 m 20 V 58 A T = 175C J This Device is PbFree and is RoHS Compliant D Typical Applications UPS DC/DC Converter G Boost Inverter S1: Kelvin Source MAXIMUM RATINGS (T = 25C unless otherwise noted) J S2: Power Source Parameter Symbol Value Unit S1 S2 DraintoSource Voltage V 1200 V NCHANNEL MOSFET DSS GatetoSource Voltage V 15/+25 V GS Recommended Operation Values T < 175C V 5/+20 V C GSop of GatetoSource Voltage Steady T = 25C Continuous Drain I 58 A C D Current (Note 2) State D Power Dissipation P 319 W D S2 (Note 2) S1 G Steady T = 100C Continuous Drain I 41 A TO2474L C D Current (Notes 1, 2) State CASE 340CJ Power Dissipation P 160 W D (Notes 1, 2) MARKING DIAGRAM Pulsed Drain Current T = 25C I 232 A A DM (Note 3) Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 AYWWZZ NTH4L040 Source Current (Body Diode) I 32 A S N120SC1 Single Pulse DraintoSource Avalanche E 578 mJ AS Energy (I = 34 A, L = 1 mH) (Note 4) L(pk) Maximum Lead Temperature for Soldering T 300 C L (1/8 from case for 5 s) A = Assembly Location Stresses exceeding those listed in the Maximum Ratings table may damage the Y = Year device. If any of these limits are exceeded, device functionality should not be WW = Work Week assumed, damage may occur and reliability may be affected. ZZ = Lot Traceability 1. JA is constant value to follow guide table of LV/HV discrete final datasheet NTH4L040N120SC1 = Specific Device Code generation. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. ORDERING INFORMATION 3. Repetitive rating, limited by max junction temperature. 4. EAS of 578 mJ is based on starting T = 25C L = 1 mH, I = 34 A, Device Package Shipping J AS V = 120 V, V = 20 V. DD GS NTH4L040N120SC1 TO2474L 30 ea / Tube Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: April, 2021 Rev. 2 NTH4L040N120SC1/DNTH4L040N120SC1 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Max Unit JunctiontoCase Steady State (Note 2) R 0.47 C/W JC JunctiontoAmbient Steady State (Notes 1, 2) R 40 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 1 mA 1200 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T I = 1 mA, referenced to 25C 0.45 V/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 100 A DSS GS J V = 1200 V DS T = 175C 1 mA J GatetoSource Leakage Current I V = +25/15 V, V = 0 V 1 A GSS GS DS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 10 mA 1.8 3 4.3 V GS(TH) GS DS D Recommended Gate Voltage V 5 +20 V GOP DraintoSource On Resistance R V = 20 V, I = 35 A, T = 25C 40 56 m DS(on) GS D J V = 20 V, I = 35 A, T = 175C 70 100 GS D J Forward Transconductance g V = 20 V, I = 35 A 20 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 0 V, f = 1 MHz, V = 800 V 1762 pF ISS GS DS Output Capacitance C 137 OSS Reverse Transfer Capacitance C 11 RSS Total Gate Charge Q V = 5/20 V, V = 600 V, 106 nC G(TOT) GS DS I = 47 A D Threshold Gate Charge Q 16 G(TH) GatetoSource Charge Q 34 GS GatetoDrain Charge Q 26 GD GateResistance R f = 1 MHz 2.4 G SWITCHING CHARACTERISTICS, VGS = 10 V TurnOn Delay Time t V = 5/20 V, 17 30 ns d(ON) GS V = 800 V, DS Rise Time t 20 36 r I = 47 A, D R = 4.7 G TurnOff Delay Time t 32 51 d(OFF) inductive load Fall Time t 10 20 f TurnOn Switching Loss E 411 J ON TurnOff Switching Loss E 205 OFF Total Switching Loss E 616 tot DRAINSOURCE DIODE CHARACTERISTICS Continuous DrainSource Diode Forward I V = 5 V, T = 25C 32 A SD GS J Current Pulsed DrainSource Diode Forward I 232 SDM Current (Note 3) Forward Diode Voltage V V = 5 V, I = 17.5 A, T = 25C 3.7 V SD GS SD J V = 5/20 V, I = 47 A, Reverse Recovery Time t 24 ns RR GS SD dI /dt = 1000 A/ s S Reverse Recovery Charge Q 124.8 nC RR www.onsemi.com 2