C7 M NTHD4102P MOSFET Dual, P-Channel, ChipFET -20 V, -4.1 A Features NTHD4102P ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (Br)DSS GS D DraintoSource Breakdown Voltage V T 15 mV/C (Br)DSS/ J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V GS V = 16 V DS T = 85C 5.0 J GatetoSource Leakage Current I V = 0 V, V = 8.0 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V I = 250 A 0.45 1.5 V GS(TH) GS DS, D Gate Threshold Temperature Coefficient V T 2.7 mV/C GS(TH)/ J DraintoSource On Resistance R V = 4.5 V, I = 2.9 A 64 80 m DS(ON) GS D V = 2.5 V, I = 2.2 A 85 110 GS D V = 1.8 V, I = 1.0 A 120 170 DS D Forward Transconductance g V = 10 V, I = 2.9 A 7.0 S FS DS D CHARGES, CAPACITANCES, AND GATE RESISTANCE Input Capacitance C 750 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C V = 16 V 100 OSS DS Reverse Transfer Capacitance C 45 RSS Total Gate Charge Q 7.6 8.6 nC G(TOT) V = 4.5 V, V = 16 V, GS DS GatetoSource Charge Q 1.3 GS I = 2.6 A D GatetoDrain Charge Q 2.6 GD SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 5.5 10 ns d(ON) Rise Time t 12 25 r V = 4.5 V, V = 16 V, GS DD I = 2.6 A, R = 2.0 TurnOff Delay Time t 32 40 D G d(OFF) Fall Time t 23 35 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, I = 1.1 A 0.8 1.2 V SD GS S Reverse Recovery Time t 20 40 ns RR Charge Time ta 15 V = 0 V, dI /dt = 100 A/ s, GS S I = 1.0 A S Discharge Time tb 5 Reverse Recovery Charge Q 0.01 C RR 2. Pulse test: pulse width 300 s, duty cycle 2% 3. Switching characteristics are independent of operating junction temperatures