V 1200 V DS I 25C 90 A D C2M0025120D R 25 m DS(on) Silicon Carbide Power MOSFET TM C2M MOSFET Technology N-Channel Enhancement Mode Features Package High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benefits Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Solar Inverters Switch Mode Power Supplies Part Number Package High Voltage DC/DC converters Battery Chargers C2M0025120D TO-247-3 Motor Drive Pulsed Power Applications Maximum Ratings (T = 25 C unless other wise specified) C Symbol Parameter Value Unit Test Conditions Note V = 0 V, I = 100 A V Drain - Source Voltage 1200 V GS D DSmax V Gate - Source Voltage -10/+25 V Absolute maximum values GSmax Gate - Source Voltage -5/+20 V Recommended operational values V GSop 90 Fig. 19 V =20 V, T = 25C GS C Continuous Drain Current A I D 60 V =20 V, T = 100C GS C Pulsed Drain Current 250 A Fig. 22 I Pulse width t limited by T D(pulse) jmax P Power Dissipation 463 W T =25C, T = 150 C Fig. 20 P C J D -55 to T , T Operating Junction and Storage Temperature C J stg +150 T Solder Temperature 260 C 1.6mm (0.063) from case for 10s L 1 Nm Mounting Torque M3 or 6-32 screw M d 8.8 lbf-in 1 C2M0025120D Rev. B, 10-2015 Electrical Characteristics (T = 25C unless other wise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V (BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 A 2.0 2.6 4 V V = V , I = 15mA DS GS D V Gate Threshold Voltage Fig. 11 GS(th) 2.1 V V = V , I = 15mA, T = 150 C DS GS D J I Zero Gate Voltage Drain Current 2 100 A V = 1200 V, V = 0 V DSS DS GS IGSS Gate-Source Leakage Current 600 nA VGS = 20 V, VDS = 0 V 25 34 VGS = 20 V, ID = 50 A Fig. R Drain-Source On-State Resistance m DS(on) 4,5,6 43 V = 20 V, I = 50 A, T = 150 C GS D J 23.6 V = 20 V, I = 50 A DS DS g Transconductance S Fig. 7 fs 21.7 V = 20 V, I = 50 A, T = 150 C DS DS J Ciss Input Capacitance 2788 VGS = 0 V Fig. C Output Capacitance 220 oss pF VDS = 1000 V 17,18 C Reverse Transfer Capacitance 15 rss f = 1 MHz AC V = 25 mV E C Stored Energy 121 J Fig 16 oss oss E Avalanche Energy, Single Pluse 3.5 J I = 50A, V = 50V Fig. 29 AS D DD E Turn-On Switching Energy 1.4 ON V = 800 V, V = -5/20 V, DS GS mJ Fig. 25 I = 50A, R = 2.5,L= 412 H E Turn Off Switching Energy 0.3 D G(ext) OFF t Turn-On Delay Time 14 d(on) VDD = 800 V, VGS = -5/20 V ID = 50 A, t Rise Time 32 r ns RG(ext) = 2.5 , R = 16 Fig. 27 L td(off ) Turn-Off Delay Time 29 Timing relative to V DS Per IEC60747-8-4 pg 83 tf Fall Time 28 , R Internal Gate Resistance 1.1 f = 1 MHz V = 25 mV, ESR of C G(int) AC ISS Q Gate to Source Charge 46 gs V = 800 V, V = -5/20 V DS GS Q Gate to Drain Charge 50 nC I = 50 A Fig. 12 gd D Per IEC60747-8-4 pg 83 Qg Total Gate Charge 161 Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 3.3 V V = - 5 V, I = 25 A GS SD Fig. 8, 9, V Diode Forward Voltage SD 10 3.1 V V = - 5 V, I = 25 A, T = 150 C GS SD J I Continuous Diode Forward Current 90 T = 25 C Note 1 S C t Reverse Recovery Time 45 ns rr V = - 5 V, I = 50 A ,T = 25 C GS SD J VR = 800 V Q Reverse Recovery Charge 406 nC Note 1 rr dif/dt = 1000 A/s I Peak Reverse Recovery Current 13.5 A rrm Note (1): When using SiC Body Diode the maximum recommended V = -5V GS Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note R Thermal Resistance from Junction to Case 0.24 0.27 Fig. 21 JC C/W R Thermal Resistance from Junction to Ambient 40 JC 2 C2M0025120D Rev. B, 10-2015