M C8 NTHD4508N MOSFET Power, Dual, N-Channel, ChipFET 20 V, 4.1 A Features NTHD4508N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Units OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V 20 V (BR)DSS GS Zero Gate Voltage Drain Current I A V = 0 V, V = 16 V 1.0 DSS GS DS V = 0 V, V = 16 V, T = 125C 10 GS DS J GatetoSource Leakage Current I V = 0 V, V = 12 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 0.6 1.2 V GS(TH) GS DS D DraintoSource OnResistance R V = 4.5, I = 3.1 A 60 75 m DS(on) GS D V = 2.5, I = 2.3 A 80 115 GS D Forward Transconductance g V = 10 V, I = 3.1 A 6.0 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 180 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 80 OSS V = 10 V DS Reverse Transfer Capacitance C 25 RSS Total Gate Charge Q 2.6 4.0 nC G(TOT) Threshold Gate Charge Q 0.5 G(TH) V = 4.5 V, V = 10 V, GS DS I = 3.1 A GatetoSource Charge Q D 0.6 GS GatetoDrain Charge Q 0.7 GD SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 5.0 10 ns d(ON) Rise Time t 15 30 r V = 4.5 V, V = 16 V, GS DS I = 3.1 A, R = 2.5 TurnOff Delay Time t D G 10 20 d(OFF) Fall Time t 3.0 6.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, I = 3.1 A 0.75 1.15 V SD GS S ns Reverse Recovery Time t 12.5 RR Charge Time ta 9.0 V = 0 V, I = 1.5 A, GS S dI /dt = 100 A/ s Discharge Time tb S 3.5 Reverse Recovery Charge Q 6.0 nC RR 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.