X-On Electronics has gained recognition as a prominent supplier of NTHD4508NT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTHD4508NT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTHD4508NT1G ON Semiconductor

NTHD4508NT1G electronic component of ON Semiconductor
NTHD4508NT1G ON Semiconductor
NTHD4508NT1G MOSFETs
NTHD4508NT1G  Semiconductors

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See Product Specifications
Part No. NTHD4508NT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 20V 4.1A Dual N-Channel
Datasheet: NTHD4508NT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5227 ea
Line Total: USD 0.52 
Availability - 1
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ : 1
Multiples : 1
1 : USD 0.5227

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Transistor Type
Type
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Typical Turn-On Delay Time
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We are delighted to provide the NTHD4508NT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTHD4508NT1G and other electronic components in the MOSFETs category and beyond.

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M C8 NTHD4508N MOSFET Power, Dual, N-Channel, ChipFET 20 V, 4.1 A Features NTHD4508N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Units OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V 20 V (BR)DSS GS Zero Gate Voltage Drain Current I A V = 0 V, V = 16 V 1.0 DSS GS DS V = 0 V, V = 16 V, T = 125C 10 GS DS J GatetoSource Leakage Current I V = 0 V, V = 12 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 0.6 1.2 V GS(TH) GS DS D DraintoSource OnResistance R V = 4.5, I = 3.1 A 60 75 m DS(on) GS D V = 2.5, I = 2.3 A 80 115 GS D Forward Transconductance g V = 10 V, I = 3.1 A 6.0 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 180 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 80 OSS V = 10 V DS Reverse Transfer Capacitance C 25 RSS Total Gate Charge Q 2.6 4.0 nC G(TOT) Threshold Gate Charge Q 0.5 G(TH) V = 4.5 V, V = 10 V, GS DS I = 3.1 A GatetoSource Charge Q D 0.6 GS GatetoDrain Charge Q 0.7 GD SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 5.0 10 ns d(ON) Rise Time t 15 30 r V = 4.5 V, V = 16 V, GS DS I = 3.1 A, R = 2.5 TurnOff Delay Time t D G 10 20 d(OFF) Fall Time t 3.0 6.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, I = 3.1 A 0.75 1.15 V SD GS S ns Reverse Recovery Time t 12.5 RR Charge Time ta 9.0 V = 0 V, I = 1.5 A, GS S dI /dt = 100 A/ s Discharge Time tb S 3.5 Reverse Recovery Charge Q 6.0 nC RR 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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