C3 M NTHD4P02F MOSFET Power, Single, P-Channel, Schottky Diode, ChipFET, Schottky Barrier -20 V, -3.0 A, 3.0 A NTHD4P02F SCHOTTKY DIODE MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Units Average Rectified Steady I 2.2 A F Forward Current State T = 25C J t 5 s 3.0 A Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Max Units JunctiontoAmbient (Note 1) R C/W Steady State 110 JA T = 25C J t 5 s 60 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq 1 oz including traces). MOSFET ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Units OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 23 V (BR)DSS GS D Zero Gate Voltage Drain Current I V = 16 V, V = 0 V, T = 25C 1.0 A DSS DS GS J V = 16 V, V = 0 V, T = 85C 5.0 DS GS J GatetoSource Leakage Current I V = 0 V, V = 12 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 0.6 0.75 1.2 V GS(TH) GS DS D DraintoSource On Resistance R V = 4.5, I = 2.2 A 0.130 0.155 DS(on) GS D V = 2.5, I = 1.7 A 0.200 0.240 GS D Forward Transconductance g V = 10 V, I = 1.7 A 5.0 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 185 300 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 95 150 OSS V = 10 V DS Reverse Transfer Capacitance C 30 50 RSS Total Gate Charge Q 3.0 6.0 nC G(TOT) Threshold Gate Charge Q 0.2 G(TH) V = 4.5 V, V = 10 V, GS DS I = 2.2 A GatetoSource Charge Q D 0.5 GS GatetoDrain Charge Q 0.9 GD SWITCHING CHARACTERISTICS (Note 3) ns TurnOn Delay Time t 7.0 12 d(ON) Rise Time t 13 25 r V = 4.5 V, V = 16 V, GS DD I = 2.2 A, R = 2.5 TurnOff Delay Time t D G 33 50 d(OFF) Fall Time t 27 40 f DRAINSOURCE DIODE CHARACTERISTICS (Note 2) Forward Diode Voltage V V = 0 V, 0.85 1.15 V SD GS I = 2.1 A S Reverse Recovery Time tRR 32 ns Charge Time ta 10 V = 0 V, I = 2.1 A , GS S dI /dt = 100 A/ s Discharge Time tb S 22 Reverse Recovery Charge QRR 15 nC SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Units