NTHD3102CT1G ON Semiconductor

D6 M NTHD3102C MOSFET Power, Complementary, ChipFET 20 V, +5.5 A /-4.2 A Features NTHD3102C MAXIMUM RATINGS (continued) (T = 25C unless otherwise noted) J Parameter Symbol Value Unit NChannel Steady T = 25C I 3.0 A A D Continuous Drain Current (Note 3) State T = 85C 2.2 A PChannel Steady I A T = 25C 2.3 A D Continuous Drain Current (Note 3) State T = 85C 1.7 A Power Dissipation (Note 3) T = 25C P 0.6 W A D Pulsed Drain Current NCh tp = 10 s I 16 A DM PCh 12.6 Operating Junction and Storage Temperature T , T 55 to 150 C J STG Source Current (Body Diode) I 1.7 A S Lead Temperature for Soldering Purposes (1/8 from case for 10 seconds) T 260 C L THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 2) R 110 C/W JA JunctiontoAmbient t 5 s (Note 2) 60 JunctiontoAmbient Steady State (Note 3) 195 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol N/P Test Conditions Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V N I = 250 A 20 V (BR)DSS D (Note 4) V = 0 V GS P I = 250 A 20 D DraintoSource Breakdown Voltage V /T N 20.2 mV/C (BR)DSS J Temperature Coefficient P 16.2 Zero Gate Voltage Drain Current I N V = 0 V, V = 16 V 1.0 A DSS GS DS T = 25 C J P V = 0 V, V = 16 V 1.0 GS DS N V = 0 V, V = 16 V 5.0 GS DS T = 85 C J P V = 0 V, V = 16 V 5.0 GS DS GatetoSource Leakage Current I N V = 0 V, V = 8.0 V 100 nA GSS DS GS P V = 0 V, V = 8.0 V 100 DS GS Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). 3. Surfacemounted on FR4 board using the minimum recommended pad size (Cu area = TBD in sq). 4. Switching characteristics are independent of operating junction temperatures.