DMP3007LK3 Green P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Max Low On-Resistance D BV R Max DSS DS(ON) T = +25C Low Input Capacitance A Fast Switching Speed 7.0m V = -10V -18.5A GS ESD Protected Gate -30V Lead-Free Finish RoHS Compliant (Notes 1 & 2) 10.0m V = -4.5V -15.5A GS Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: TO252 (DPAK) (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic, Green Molding Compound UL ideal for high efficiency power management applications. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Finish - Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.315 grams (Approximate) DC-DC Converters TO252 (DPAK) D G S Top View Pin Out Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP3007LK3-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMP3007LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 25 V GSS T = +25C -18.5 A Continuous Drain Current, V = -10V (Note 6) Steady State I A GS D -15 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) -4.5 A I S Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) -250 A I DM Pulsed Body Diode Forward Current (380s Pulse, Duty Cycle = 1%) -250 A I SM Avalanche Current, L = 1mH (Note 7) I -16 A AS Avalanche Energy, L = 1mH (Note 7) E 130 mJ AS Thermal Characteristics Characteristic Symbol Value Unit 1.5 Total Power Dissipation (Note 5) T = +25C P W A D 81 Thermal Resistance, Junction to Ambient (Note 5) Steady State C/W R JA 3.0 Total Power Dissipation (Note 6) T = +25C P W A D 42 Thermal Resistance, Junction to Ambient (Note 6) Steady State C/W R JA C/W Thermal Resistance, Junction to Case (Note 6) 1.5 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics (T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -24V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -1.0 -2.8 V V = V , I = -250A GS(TH) DS GS D 5.8 7 V = -10V, I = -17A GS D Static Drain-Source On-Resistance R m DS(ON) 8.2 10 V = -4.5V, I = -15A GS D Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance pF C 2826 iss V = -15V, V = 0V, DS GS Output Capacitance pF C 606 oss f = 1.0MHz Reverse Transfer Capacitance pF C 305 rss V = 0V, V = 0V, f = DS GS Gate Resistance 22.8 R g 1.0MHz Total Gate Charge (V = -4.5V) Q 31.2 nC GS g Total Gate Charge (V = -10V) Q 64.2 nC GS g V = -15V, I = -11.5A DS D Gate-Source Charge Q nC gs 10.6 Gate-Drain Charge nC Q 11.6 gd Turn-On Delay Time 4.8 ns t D(ON) Turn-On Rise Time 4.3 ns t V = -15V, V = -10V, R DD GS Turn-Off Delay Time 306 ns R = 6, I = -11.5A t g D D(OFF) Turn-Off Fall Time 125 ns t F Reverse Recovery Time t 19 ns RR I = -11.5A, dI/dt = 100A/s S Reverse Recovery Charge Q 9.8 nC RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMP3007LK3 February 2019 Diodes Incorporated www.diodes.com Document number: DS40137 Rev. 2 - 2