MOSFET Power, N-Channel, Silicon Carbide, TO-247-4L 1200 V, 80 m NTH4L080N120SC1 www.onsemi.com Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability V R TYP I MAX compared to Silicon. In addition, the low ON resistance and compact DSS DS(ON) D chip size ensure low capacitance and gate charge. Consequently, 1200 V 80 m 29 A system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. NCHANNEL MOSFET D Features 1200 V T = 175C J Max R = 110 m at V = 20 V, I = 20 A DS(on) GS D S1: Kelvin Source High Speed Switching with Low Capacitance S2: Power Source G 100% Avalanche Tested RoHS Compliant S1 S2 Applications Industrial Motor Drive UPS Boost Inverter PV Charger D S2 S1 G TO2474LD CASE 340CJ MARKING DIAGRAM AYWWZZ NTH4L080 N120SC1 A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability NTH4L080N120SC1 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: December, 2019 Rev. 1 NTH4L080N120SC1/DNTH4L080N120SC1 ABSOLUTE MAXIMUM RATINGS (T = 25C, unless otherwise noted) A Symbol Parameter Ratings Unit V DraintoSource Voltage 1200 V DSmax V Max. GatetoSource Voltage T < 150C 15 / +25 V GSmax C V (DC) Recommended operation Values of Gate T < 150C 5 / +20 V GSop C Source Voltage V (AC) Recommended operation Values of Gate T < 150C 5 / +20 V GSop C Source Voltage (f > 1 Hz) I Continuous Drain Current V = 20 V, T = 25C 29 A D GS C V = 20 V, T = 100C 21 GS C I Pulse Drain Current Pulse width tp limited by 125 A D(Pulse) Tj max E Single Pulse Avalanche Energy (Note 1) 171 mJ AS P Power Dissipation T = 25C 170 W tot C T = 150C 28 C T , T Operating and Storage Junction Temperature Range 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 171 mJ is based on starting Tj = 25C, L = 1 mH, I = 18.5 A, , V = 50 V, R = 25 . AS AS DD G THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R Thermal Resistance, JunctiontoCase 0.88 C/W JC R Thermal Resistance, JunctiontoAmbient 40 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NTH4L080N120SC1 NTH4L080N120SC1 TO2474L Tube N/A N/A 30 Units www.onsemi.com 2