TM V I R t DSS D25 DS(on) rr HiPerFET Power MOSFET IXFN 55N50 500V 55A 80m 250ns IXFN 50N50 500V 50A 100m 250ns IXFK 55N50 500V 55A 80m 250ns Single Die MOSFET IXFK 50N50 500V 50A 100m 250ns Preliminary data sheet TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFK IXFN IXFN 55N50 50N50 55N50 50N50 V T = 25C to 150C 500 500 V DSS J V T = 25C to 150C 500 500 V DGR J G D (TAB) D S V Continuous 20 20 V GS V Transient 30 30 V GSM miniBLOC, SOT-227 B (IXFN) I T = 25C 55 50 55 50 A D25 C E153432 S I T =25C, 220 200 220 200 A DM C I T = 25C 55 50 55 50 A G AR C E T = 25C60 60 mJ AR C dv/dt I I , di/dt 100 A/ s, V V 5 5 V/ns S DM DD DSS S T 150C, R = 2 J G D P T = 25C 560 600 W D C G = Gate D = Drain T -55 ... +150 C J S = Source TAB = Drain T 150 C JM Either Source terminal at miniBLOC can be used T -55 ... +150 C as Main or Kelvin Source stg T 1.6 mm (0.063 in) from case for 10 s 300 N/A C L Features V 50/60 Hz, RMS t = 1 min N/A 2500 V~ ISOL International standard packages I 1 mA t = 1 s N/A 3000 V~ Encapsulating epoxy meets ISOL UL 94 V-0, flammability classification M Mounting torque 0.9/6 1.5/13 Nm/lb.in. d miniBLOC with Aluminium nitride Terminal connection torque N/A 1.5/13 Nm/lb.in. isolation TM Weight 10 30 g Low R HDMOS process DS (on) Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. J Applications DC-DC converters V V = 0 V, I = 1mA 500 V DSS GS D Battery chargers V V = V , I = 8mA 2.5 4.5 V Switched-mode and resonant-mode GS(th) DS GS D power supplies I V = 20V V = 0V 200 nA GSS GS DS DC choppers I V = V T = 25C25 A Temperature and lighting controls DSS DS DSS J V = 0 V T = 125C2mA GS J Advantages R V = 10 V, I = 0.5 I 55N50 80 m DS(on) GS D D25 Easy to mount Note 1 50N50 100 m Space savings High power density 97502F (04/02) 2002 IXYS All rights reservedIXFK50N50 IXFK55N50 IXFN50N50 IXFN55N50 Symbol Test Conditions Characteristic Values TO-264 AA Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g V = 10 V I = 0.5 I Note 1 45 S fs DS D D25 C 9400 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1280 pF oss GS DS C 460 pF rss t 45 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 60 ns r GS DS DSS D D25 t R = 1 (External), 120 ns d(off) G Dim. Millimeter Inches Min. Max. Min. Max. t 45 ns f A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 Q 330 nC A2 2.00 2.10 .079 .083 g(on) b 1.12 1.42 .044 .056 Q V = 10 V, V = 0.5 V , I = 0.5 I 55 nC b1 2.39 2.69 .094 .106 gs GS DS DSS D D25 b2 2.90 3.09 .114 .122 Q 155 nC c 0.53 0.83 .021 .033 gd D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 R TO-264 AA 0.22 K/W thJC e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 R TO-264 AA 0.15 K/W thCK K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 R miniBLOC, SOT-227 B 0.21 K/W L1 2.29 2.59 .090 .102 thJC P 3.17 3.66 .125 .144 R miniBLOC, SOT-227 B 0.05 K/W thCK Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 Source-Drain Diode (T = 25C, unless otherwise specified) Characteristic Values J miniBLOC, SOT-227 B Symbol Test Conditions Min. Typ. Max. I V = 0 55N50 55 A S GS 50N50 50 A I Repetitive 55N50 220 A SM pulse width limited by T 50N50 200 A JM V I = 100 A, V = 0 V Note 1 1.5 V SD F GS t 250 ns rr M4 screws (4x) supplied Q I = 25 A, -di/dt = 100 A/ s, V = 100 V 1.0 C RM F R Dim. Millimeter Inches Min. Max. Min. Max. I 10 A RM A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 Notes: 1. Pulse test, t 300 s, duty cycle d 2 % F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025