X-On Electronics has gained recognition as a prominent supplier of NTB45N06G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTB45N06G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTB45N06G ON Semiconductor

NTB45N06G electronic component of ON Semiconductor
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Part No.NTB45N06G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 60V 45A N-Channel
Datasheet: NTB45N06G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 0.7722 ea
Line Total: USD 77.22 
Availability - 0
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 100
Multiples : 1
100 : USD 0.7722
400 : USD 0.7488
800 : USD 0.7313
1650 : USD 0.702
4150 : USD 0.702
8350 : USD 0.702

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the NTB45N06G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTB45N06G and other electronic components in the MOSFETs category and beyond.

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NTP45N06, NTB45N06 Power MOSFET 45 Amps, 60 Volts 2 NChannel TO220 and D PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge NTP45N06, NTB45N06 MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit Thermal Resistance JunctiontoCase R 1.2 C/W JC JunctiontoAmbient (Note 3.) R 46.8 JA JunctiontoAmbient (Note 4.) R 63.2 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 5.) V Vdc (BR)DSS (V = 0 Vdc, I = 250 Adc) 60 70 GS D Temperature Coefficient (Positive) 57 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 60 Vdc, V = 0 Vdc) 1.0 DS GS (V = 60 Vdc, V = 0 Vdc, T = 150C) 10 DS GS J GateBody Leakage Current (V = 20 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 5.) Gate Threshold Voltage (Note 5.) V Vdc GS(th) (V = V , I = 250 Adc) 2.0 2.8 4.0 mV/C DS GS D Threshold Temperature Coefficient (Negative) 7.2 Static DraintoSource OnResistance (Note 5.) R mOhm DS(on) (V = 10 Vdc, I = 22.5 Adc) 21 26 GS D Static DraintoSource OnVoltage (Note 5.) V Vdc DS(on) (V = 10 Vdc, I = 45 Adc) 0.93 1.4 GS D (V = 10 Vdc, I = 22.5 Adc, T = 150C) 0.93 GS D J Forward Transconductance (Note 5.) (V = 8.0 Vdc, I = 12 Adc) g 16.6 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 1224 1725 pF iss (V(V = 25 Vdc, V25 Vd V = 0 Vdc,0 Vd DS GS Output Capacitance C 345 485 oss ff = 1.0 MHz = 1.0 MHz)) Transfer Capacitance C 76 160 rss SWITCHING CHARACTERISTICS (Note 6.) TurnOn Delay Time t 10 25 ns d(on) Rise Time t 101 200 r (V(V = 30 Vdc, I30 Vdc, I = 45 Adc, 45 Adc, DDDD DD V = 10 Vdc, R = 9.1 ) (Note 5.) GS G TurnOff Delay Time t 33 70 d(off) Fall Time t 106 220 f Gate Charge Q 33 46 nC T (V(V = 48 Vdc, I48 Vd I = 45 Adc,45 Ad DS D Q 6.4 1 VV = 10 Vdc= 10 Vdc)) (Note(Note 5. 5.)) GSGS Q 15 2 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I = 45 Adc, V = 0 Vdc) (Note 5.) V 1.08 1.2 Vdc S GS SD (I = 45 Adc, V = 0 Vdc, T = 150C) 0.93 S GS J Reverse Recovery Time t 53.1 ns rr (I(I = 45 Adc, V45 Ad V = 0 Vdc,0 Vd S GS t 36 a dIdI /dt/dt = 100 A/ = 100 A/s)s) ((NoteNote 5. 5.)) SS t 16.9 b Reverse Recovery Stored Charge Q 0.087 C RR 2 3. When surface mounted to an FR4 board using 1 pad size, (Cu Area 1.127 in ). 2 4. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in ). 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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