NTP45N06, NTB45N06 Power MOSFET 45 Amps, 60 Volts 2 NChannel TO220 and D PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge NTP45N06, NTB45N06 MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit Thermal Resistance JunctiontoCase R 1.2 C/W JC JunctiontoAmbient (Note 3.) R 46.8 JA JunctiontoAmbient (Note 4.) R 63.2 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 5.) V Vdc (BR)DSS (V = 0 Vdc, I = 250 Adc) 60 70 GS D Temperature Coefficient (Positive) 57 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 60 Vdc, V = 0 Vdc) 1.0 DS GS (V = 60 Vdc, V = 0 Vdc, T = 150C) 10 DS GS J GateBody Leakage Current (V = 20 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 5.) Gate Threshold Voltage (Note 5.) V Vdc GS(th) (V = V , I = 250 Adc) 2.0 2.8 4.0 mV/C DS GS D Threshold Temperature Coefficient (Negative) 7.2 Static DraintoSource OnResistance (Note 5.) R mOhm DS(on) (V = 10 Vdc, I = 22.5 Adc) 21 26 GS D Static DraintoSource OnVoltage (Note 5.) V Vdc DS(on) (V = 10 Vdc, I = 45 Adc) 0.93 1.4 GS D (V = 10 Vdc, I = 22.5 Adc, T = 150C) 0.93 GS D J Forward Transconductance (Note 5.) (V = 8.0 Vdc, I = 12 Adc) g 16.6 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 1224 1725 pF iss (V(V = 25 Vdc, V25 Vd V = 0 Vdc,0 Vd DS GS Output Capacitance C 345 485 oss ff = 1.0 MHz = 1.0 MHz)) Transfer Capacitance C 76 160 rss SWITCHING CHARACTERISTICS (Note 6.) TurnOn Delay Time t 10 25 ns d(on) Rise Time t 101 200 r (V(V = 30 Vdc, I30 Vdc, I = 45 Adc, 45 Adc, DDDD DD V = 10 Vdc, R = 9.1 ) (Note 5.) GS G TurnOff Delay Time t 33 70 d(off) Fall Time t 106 220 f Gate Charge Q 33 46 nC T (V(V = 48 Vdc, I48 Vd I = 45 Adc,45 Ad DS D Q 6.4 1 VV = 10 Vdc= 10 Vdc)) (Note(Note 5. 5.)) GSGS Q 15 2 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I = 45 Adc, V = 0 Vdc) (Note 5.) V 1.08 1.2 Vdc S GS SD (I = 45 Adc, V = 0 Vdc, T = 150C) 0.93 S GS J Reverse Recovery Time t 53.1 ns rr (I(I = 45 Adc, V45 Ad V = 0 Vdc,0 Vd S GS t 36 a dIdI /dt/dt = 100 A/ = 100 A/s)s) ((NoteNote 5. 5.)) SS t 16.9 b Reverse Recovery Stored Charge Q 0.087 C RR 2 3. When surface mounted to an FR4 board using 1 pad size, (Cu Area 1.127 in ). 2 4. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in ). 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.