X-On Electronics has gained recognition as a prominent supplier of NTD12N10T4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD12N10T4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD12N10T4G ON Semiconductor

NTD12N10T4G electronic component of ON Semiconductor
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See Product Specifications
Part No.NTD12N10T4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 100V 12A N-Channel
Datasheet: NTD12N10T4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.1938 ea
Line Total: USD 484.5 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 1
2500 : USD 0.3685
2500 : USD 0.351
2500 : USD 0.3393
5000 : USD 0.31
10000 : USD 0.31
20000 : USD 0.2925

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.1938
2501 : USD 0.0935
5001 : USD 0.0915

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTD12N10T4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD12N10T4G and other electronic components in the MOSFETs category and beyond.

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NTD12N10 Power MOSFET 12 Amps, 100 Volts N Channel EnhancementMode DPAK NTD12N10 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V Vdc (BR)DSS (V = 0 Vdc, I = 250 Adc) 100 GS D Temperature Coefficient (Positive) 135 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 0 Vdc, V = 100 Vdc, T = 25C) 5.0 GS DS J (V = 0 Vdc, V = 100 Vdc, T = 125C) 50 GS DS J GateBody Leakage Current (V = 20 Vdc, V = 0) I 100 nAdc GS DS GSS ON CHARACTERISTICS Gate Threshold Voltage V Vdc GS(th) V = V I = 250 Adc) 2.0 3.1 4.0 DS GS, D Temperature Coefficient (Negative) 7.5 mV/C Static DraintoSource OnState Resistance R DS(on) (V = 10 Vdc, I = 6.0 Adc) 0.130 0.165 GS D (V = 10 Vdc, I = 6.0 Adc, T = 125C) 0.250 0.400 GS D J DraintoSource OnVoltage V Vdc DS(on) (V = 10 Vdc, I = 12 Adc) 1.62 2.16 GS D Forward Transconductance (V = 10 Vdc, I = 6.0 Adc) g 7.0 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 390 550 pF iss (V = 25 Vdc, V = 0 Vdc, DS GS Output Capacitance C 115 160 oss f = 1.0 MHz) Reverse Transfer Capacitance C 35 70 rss SWITCHING CHARACTERISTICS (Notes 4 & 5) TurnOn Delay Time t 11 20 ns d(on) Rise Time t 30 60 (V = 80 Vdc, I = 12 Adc, r DD D V = 10 Vdc, R = 9.1 ) GS G Turn Off Delay Time t 22 40 d(off) Fall Time t 32 60 f Total Gate Charge Q 14 20 nC tot (V = 80 Vdc, I = 12 Adc, DS D GatetoSource Charge Q 3.0 gs V = 10 Vdc) GS GatetoDrain Charge Q 7.0 gd BODYDRAIN DIODE RATINGS (Note 4) Diode Forward OnVoltage (I = 12 Adc, V = 0 Vdc) V 0.95 1.0 Vdc S GS SD (I = 12 Adc, V = 0 Vdc, T = 125C) 0.80 S GS J t 85 Reverse Recovery Time ns rr (I = 12 Adc, V = 0 Vdc, S GS t 60 a dI /dt = 100 A/ s) S t 28 b Reverse Recovery Stored Charge Q 0.3 C RR 4. Indicates Pulse Test: P.W. = 300 s max, Duty Cycle = 2%. 5. Switching characteristics are independent of operating junction temperature. ORDERING INFORMATION Device Package Shipping NTD12N10G DPAK 75 Units/Rail (Pb Free) NTD12N10 1G DPAK 3 75 Units/Rail (Pb Free) NTD12N10T4G DPAK 2500 Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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