NTD20P06L, NTDV20P06L Power MOSFET 60 V, 15.5 A, Single PChannel, DPAK Features Withstands High Energy in Avalanche and Commutation Modes NTD20P06L, NTDV20P06L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 74 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 64 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 60 V DS T = 150C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.0 1.5 2.0 V GS(TH) GS DS D Gate Threshold Temperature Coefficient V /T 3.1 mV/C GS(TH) J DraintoSource On Resistance R V = 5.0 V, I = 7.5 A 0.130 0.150 DS(on) GS D V = 5.0 V, I = 15 A 0.143 GS D Forward Transconductance g V = 10 V, I = 7.5 A 11 S FS DS D DraintoSource OnVoltage V T = 25C 1.2 V DS(on) J V = 5.0 V, GS I = 7.5 A D T = 150C 1.9 J CHARGES AND CAPACITANCES Input Capacitance C 740 1190 pF ISS Output Capacitance C 207 300 V = 0 V, f = 1 MHz, V = 25 V OSS GS DS Reverse Transfer Capacitance C 66 120 RSS nC Total Gate Charge Q 15 26 G(TOT) V = 5.0 V, V = 48 V, GS DS GatetoSource Charge Q 4.0 GS I = 18 A D GatetoDrain Charge Q 7.0 GD SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 11 20 ns d(ON) Rise Time t 90 180 r V = 5.0 V, V = 30 V, GS DD I = 15 A, R = 9.1 D G Turn Off Delay Time t 28 50 d(OFF) Fall Time t 70 135 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 1.5 2.5 V SD J V = 0 V, I = 15 A GS S T = 150C 1.3 J Reverse Recovery Time t 60 ns RR Charge Time t 39 a V = 0 V, d /d = 100 A/ s, GS IS t I = 12 A S Discharge Time t 21 b Reverse Recovery Charge Q 0.13 nC RR 3. Pulse Test: pulse width 300 s, duty cycle 2% 4. Switching characteristics are independent of operating junction temperatures