NTD4810NT4G ON Semiconductor

NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single NChannel, DPAK/IPAK Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NTD4810N, NVD4810N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit C/W Junction toCase (Drain) R 3.0 JC Junction toTAB (Drain) R 3.5 JC TAB JunctiontoAmbient Steady State (Note 1) R 57.2 JA JunctiontoAmbient Steady State (Note 2) R 107.3 JA 1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 27 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.2 mV/C GS(TH) J DraintoSource On Resistance R V = 10 to m I = 30 A 8.0 10 DS(on) GS D 11.5 V I = 15 A 7.8 D V = 4.5 V I = 30 A 12 15.7 GS D I = 15 A 11 D Forward Transconductance g V = 15 V, I = 10 A 9.0 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1165 1350 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 284 330 oss V = 12 V DS Reverse Transfer Capacitance C 154 200 rss nC Total Gate Charge Q 9.2 11 G(TOT) Threshold Gate Charge Q 1.3 G(TH) V = 4.5 V, V = 15 V, GS DS I = 30 A GatetoSource Charge Q D 3.3 GS GatetoDrain Charge Q 4.4 GD Total Gate Charge Q V = 11.5 V, V = 15 V, 21 nC G(TOT) GS DS I = 30 A D SWITCHING CHARACTERISTICS (Note 4) ns TurnOn Delay Time t 11.5 d(on) Rise Time t 20.7 r V = 4.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 D G Turn Off Delay Time t 13.8 d(off) Fall Time t 3.8 f ns TurnOn Delay Time t 7.2 d(on) Rise Time t 20.7 r V = 11.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 Turn Off Delay Time t D G 21.8 d(off) Fall Time t 2.6 f 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.