NTD4813NH, NVD4813NH MOSFET Power, Single, N-Channel, DPAK/IPAK 30 V, 40 A Features NTD4813NH, NVD4813NH MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit Single Pulse DraintoSource Avalanche EAS 44.4 mJ Energy (V = 24 V, V = 10 V, DD GS I = 17.2 A , L = 0.3 mH, R = 25 L pk G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.