NTD6416AN, NVD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 m Features Low R DS(on) High Current Capability NTD6416AN, NVD6416AN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 112 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 100 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(TH) GS DS D Negative Threshold Temperature V /T 7.7 mV/C GS(TH) J Coefficient DraintoSource OnResistance R V = 10 V, I = 17 A 73 81 m DS(on) GS D Forward Transconductance g V = 5 V, I = 10 A 12 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 620 pF ISS Output Capacitance C 110 V = 0 V, f = 1.0 MHz, V = 25 V OSS GS DS Reverse Transfer Capacitance C 50 RSS Total Gate Charge Q 20 nC G(TOT) Threshold Gate Charge Q 1.0 G(TH) GatetoSource Charge Q 3.6 GS V = 10 V, V = 80 V, I = 17 A GS DS D GatetoDrain Charge Q 10 GD Plateau Voltage V 5.8 V GP Gate Resistance R 2.4 G SWITCHING CHARACTERISTICS (Note 4) ns TurnOn Delay Time t 9.2 d(on) Rise Time t 22 r V = 10 V, V = 80 V, GS DD I = 17 A, R = 6.1 D G Turn Off Delay Time t 24 d(off) Fall Time t 20 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.85 1.2 V SD J V = 0 V, I = 17 A GS S T = 125C 0.7 J Reverse Recovery Time t 56 ns rr Charge Time t 41 a V = 0 V, dI /dt = 100 A/ s, GS S I = 17 A S Discharge Time t 15 b Reverse Recovery Charge Q 135 nC RR 2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.