X-On Electronics has gained recognition as a prominent supplier of NTD6600NT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD6600NT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD6600NT4G ON Semiconductor

NTD6600NT4G electronic component of ON Semiconductor
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See Product Specifications
Part No.NTD6600NT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 100V 12A N-Channel
Datasheet: NTD6600NT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.6435 ea
Line Total: USD 1608.75 
Availability - 0
MOQ: 2500  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 1
2500 : USD 0.6435
2500 : USD 0.6259
2500 : USD 0.6084
2500 : USD 0.585
5000 : USD 0.585
10000 : USD 0.585

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTD6600NT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD6600NT4G and other electronic components in the MOSFETs category and beyond.

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NTD6600N Power MOSFET 100 V, 12 A, NChannel, Logic Level DPAK Features SourcetoDrain Diode Recovery Time Comparable to a NTD6600N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V Vdc (BR)DSS (V = 0 Vdc, I = 250 Adc) 100 GS D Zero Gate Voltage Drain Current I Adc DSS (V = 0 Vdc, V = 100 Vdc, T = 25C) 1.0 GS DS J (V = 0 Vdc, V = 100 Vdc, T = 125C) 10 GS DS J GateBody Leakage Current (V = 20 Vdc, V = 0) I 100 nAdc GS DS GSS ON CHARACTERISTICS Gate Threshold Voltage V GS(th) V = V I = 250 Adc) 1.0 1.5 2.0 Vdc DS GS, D 4.4 mV/C Temperature Coefficient (Negative) Static DraintoSource OnState Resistance (V = 5.0 Vdc, I = 6.0 Adc) R 118 146 m GS D DS(on) DraintoSource OnVoltage (V = 5.0 Vdc, I = 12 Adc) V 1.5 2.2 Vdc GS D DS(on) Forward Transconductance (V = 10 Vdc, I = 6.0 Adc) g 10 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 463 700 pF iss (V = 25 Vdc, V = 0 Vdc, DS GS Output Capacitance C 116 225 oss f = 1.0 MHz) Reverse Transfer Capacitance C 36 75 rss SWITCHING CHARACTERISTICS (Notes 4 & 5) TurnOn Delay Time t 10.5 20 ns d(on) Rise Time t 75 140 r (V = 80 Vdc, I = 6.0 Adc, DD D V = 5.0 Vdc, R = 9.1 ) GS G TurnOff Delay Time t 26 40 d(off) Fall Time t 50 90 f Total Gate Charge Q 11.3 20 nC tot (V = 80 Vdc, I = 6.0 Adc, DS D GatetoSource Charge Q 1.9 gs V = 5.0 Vdc) GS GatetoDrain Charge Q 7.4 gd BODYDRAIN DIODE RATINGS (Note 4) Diode Forward OnVoltage (I = 12 Adc, V = 0 Vdc) V 0.90 1.4 Vdc S GS SD (I = 12 Adc, V = 0 Vdc, T = 125C) 0.80 S GS J Reverse Recovery Time t 80 ns rr (I = 12 Adc, V = 0 Vdc, S GS t 50 a dI /dt = 100 A/ s) S t 30 b Reverse Recovery Stored Charge Q 0.240 C RR 4. Indicates Pulse Test: P.W. = 300 s max, Duty Cycle = 2%. 5. Switching characteristics are independent of operating junction temperature. ORDERING INFORMATION Device Package Shipping NTD6600N DPAK NTD6600N1 DPAK3 75 Units/Rail NTD6600N1G DPAK3 (PbFree) NTD6600NT4 DPAK 2500 Tape & Reel NTD6600NT4G DPAK (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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