NTE2383 NTE

NTE2383 MOSFET PChannel Enhancement Mode, High Speed Switch (Compl to NTE2382) Description: The NTE2383 is a MOS power PChannel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. D Features: Lower R DS(ON) Improved Inductive Ruggedness Fast Switching Times Rugged Polysilicon Gate Cell Structure G Lower Input Capacitance Extended Safe Operating Area S Improved High Temperature Reliability Absolute Maximim Ratings: DrainSource Voltage (Note 1), V ................................................ 100V DSS DrainGate Voltage (R = 1M , Note 1), V ...................................... 100V GS DGR GateSource Voltage, V ......................................................... 20V GS Continuous Drain Current, I D T = +25 C ................................................................ 10.5A C T = +100 C ................................................................ 7.5A C Drain Current, Pulsed (Note 3), I ................................................... 42A DM Gate Current, Pulsed, I ......................................................... 1.5A GM Single Pulsed Avalanvhe Energy (Note 4), E ...................................... 510mJ AS Avalanche Current, I ............................................................ 10.5A AS Total Power Dissipation (T = +25 C), P ............................................ 75W C D Derate Above 25 C ....................................................... 0.6W/ C Operating Junction Temperature Range, T ................................. 55 to +150 C opr Storage Temperature Range, T .......................................... 55 to +150 C stg Thermal Resistance, Junction toAmbient, R .................................. 62.5 C/W thJA Thermal Resistance, Junction toCase, R .................................... 1.67 C/W thJC Thermal Resistance, Case toSink (Note 5), R ................................. 0.5 C/W thCS Maximum Lead Temperature (During Soldering, 1/8 from case, 5sec), T .............. +300 C L Note 1. T = +25 to +150 C J Note 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Note 3. Repetitive rating: Pulse width limited by max. junction temperature. Rev. 1013Note 4. L = 8.5mH, V = 25V, R = 25 , Starting T = +25 C. DD G J Note 5. Mounting surface flat, smooth, and greased. Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage V V = 0, I = 0.25mA 100 V (BR)DSS GS D Zero Gate Voltage Drain Current I V = 100V, V = 0 0.25 mA DSS DS GS V = 80V, V = 0, T = +125 C 1.0 mA DS GS J GateBody Leakage Current, Forward I V = 20V 100 nA GSS GS GateBody Leakage Current, Reverse I V = 20V 100 nA GSS GS Gate Threshold Voltage V V = V , I = 0.25mA 2.0 4.0 V GS(th) DS GS D Static DrainSource OnResistance r V = 10V, I = 5.3A, Note 2 0.3 DS(on) GS D Forward Transconductance g V 50V, I = 5.3A, Note 2 2.0 mhos FS DS D Input Capacitance C V = 25V, V = 0, f = 1MHz 835 pF iss DS GS Output Capacitance C 357 pF oss Reverse Transfer Capacitance C 94 pF rss TurnOn Delay Time t V = 50V, I = 10.5A, Z = 24 , 60 ns d(on) DD D O MOSFET switching times are Rise Time t 140 ns r essentially independent of operating temperature TurnOff Delay Time t 140 ns d(off) Fall Time t 140 ns f Total Gate Charge Q 58 nC V = 10V, V = 80V, I = 10.5A, g GS DS D Gate charge is essentially GateSource Charge Q 12.6 nC gs independent of operating temperature GateDrain (Miller) Charge Q 16.6 ns gd SourceDrain Diode Ratings and Characteristics Continuous Source Current I 10.5 A S (Body Diode) Pulse Source Current (Body Diode) I Note 3 42 A SM Diode Forward Voltage V T = +25 C, I = 10.5A, V = 0V, 6.3 V SD J S GS Note 2 Reverse Recovery Time t T = +25 C, I = 10.5A, 300 ns rr J F dI /dt = 100A/ s F Note 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Note 3. Repetitive rating: Pulse width limited by max. junction temperature.