NTE458 NChannel Silicon JFET General Purpose, Low Noise, Audio Frequency Amplifier TO92 Type package Features: Very Low Noise Low Gate Current Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A GateDrain Voltage, V ......................................................... 50V GDO GateSource Voltage, V ........................................................ 50V GSO DrainSource Voltage (V = 2V), V .............................................. 50V DS DSX Drain Current, I ................................................................. 20mA D Gate Current, I .................................................................. 10mA G Total Device Dissipation, P ..................................................... 250mW T Operating Junction Temperature, T ............................................... +125 C J Storage Temperature Range, T .......................................... 55 to +125 C stg Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Gate Reverse Current I V = 20V, V = 0 1 nA GSS GS DS ZeroGate Voltage Drain Current I V = 10V, V = 0 0.5 3.0 12 mA DSS DS GS GateSource Voltage V V = 10V, I = 10 A 0.13 0.5 1.5 V GS(off) DS D Forward Transconductance g V = 10V, I = 0.5mA, f = 1kHz 4.0 5.2 mhos fs DS D V = 10V, V = 0, f = 1MHz 4.0 12 mhos DS GS Input Capacitance C V = 10V, V = 0, f = 1MHz 13 pF iss DS GS Reverse Transfer Capacitance C V = 10V, V = 0, f = 1MHz 2.6 pF rss DS GS Noise Frequency NF V = 10V, V = 0, R = 1k , 5.0 10 dB DS GS G f = 10Hz V = 10V, V = 0, R = 1k , 1.0 3.0 dB DS GS G f = 100Hz V = 10V, V = 0, R = 1k , 0.6 1.5 dB DS GS G f = 1kHz Noise Voltage NV I = 0.5mA, R = 1k , 15 20 mV D G f = 10Hz to 1kHz (at V = 3dB) G Rev. 1013D G S .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min D G S .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max