NTGS3455T1 MOSFET P-Channel, TSOP-6 -3.5 A, -30 V Features NTGS3455T1 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Notes 3 & 4) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage V Vdc (BR)DSS (V = 0 Vdc, I = 10 A) 30 GS D Zero Gate Voltage Drain Current I Adc DSS (V = 0 Vdc, V = 30 Vdc, T = 25C) 1.0 GS DS J (V = 0 Vdc, V = 30 Vdc, T = 70C) 5.0 GS DS J GateBody Leakage Current I nAdc GSS (V = 20.0 Vdc, V = 0 Vdc) 100 GS DS GateBody Leakage Current I nAdc GSS (V = +20.0 Vdc, V = 0 Vdc) 100 GS DS ON CHARACTERISTICS Gate Threshold Voltage V Vdc GS(th) (V = V , I = 250 Adc) 1.0 1.87 3.0 DS GS D Static DrainSource OnState Resistance R DS(on) (V = 10 Vdc, I = 3.5 Adc) 0.094 0.100 GS D (V = 4.5 Vdc, I = 2.7 Adc) 0.144 0.170 GS D Forward Transconductance g mhos FS (V = 15 Vdc, I = 3.5 Adc) 6.0 DS D DYNAMIC CHARACTERISTICS Total Gate Charge Q 9.0 13 nC tot (V = 15 Vdc, V = 10 Vdc, DS GS GateSource Charge Q 2.5 gs I = 3.5 Adc) D GateDrain Charge Q 2.0 gd Input Capacitance C 480 pF iss (V = 5.0 Vdc, V = 0 Vdc, DS GS Output Capacitance C 220 oss f = 1.0 MHz) Reverse Transfer Capacitance C 60 rss SWITCHING CHARACTERISTICS TurnOn Delay Time t 10 20 ns d(on) Rise Time t 15 30 r (V = 20 Vdc, I = 1.0 Adc, DD D V = 10 Vdc, R = 6.0 ) GS g TurnOff Delay Time t 20 35 d(off) Fall Time t 10 20 f Reverse Recovery Time (I = 1.7 Adc, dl /dt = 100 A/s) t 30 ns S S rr BODYDRAIN DIODE RATINGS Diode Forward OnVoltage (I = 1.7 Adc, V = 0 Vdc) V 0.90 1.2 Vdc S GS SD Diode Forward OnVoltage (I = 3.5 Adc, V = 0 Vdc) V 1.0 Vdc S GS SD 3. Indicates Pulse Test: P.W. = 300 sec max, Duty Cycle = 2%. 4. Class 1 ESD rated Handling precautions to protect against electrostatic discharge are mandatory.