NTH027N65S3F MOSFET Power, N-Channel, SUPERFET III, FRFET 650 V, 75 A, 27.4 m www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductors brand new high V R MAX I MAX DSS DS(ON) D voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate 650 V 27.4 m 10 V 75 A charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and D withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFETs optimized reverse recovery performance of body diode can remove additional component and G improve system reliability. Features S 700 V T = 150C J POWER MOSFET Typ. R = 23 m DS(on) Ultra Low Gate Charge (Typ. Q = 259 nC) g Low Effective Output Capacitance (Typ. C = 1972 pF) oss(eff.) 100% Avalanche Tested These Devices are PbFree and are RoHS Compliant G Applications D S TO247 LONG LEADS Telecom / Server Power Supplies CASE 340CH Industrial Power Supplies EV Charger MARKING DIAGRAM UPS / Solar Y&Z&3&K NTH 027N65S3F Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot NTH027N65S3F = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2019 Rev. 4 NTH027N65S3F/DNTH027N65S3F ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter NTH027N65S3FF155 Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 75 A D C Continuous (T = 100C) 60 C I Drain Current Pulsed (Note 1) 187.5 A DM E Single Pulsed Avalanche Energy (Note 2) 1610 mJ AS I Avalanche Current (Note 2) 15 A AS E Repetitive Avalanche Energy (Note 1) 5.95 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 P Power Dissipation (T = 25C) 595 W D C Derate Above 25C 4.76 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 15 A, R = 25 , starting T = 25C. AS G J 3. I 37.5 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter NTH027N65S3FF155 Unit R Thermal Resistance, Junction to Case, Max. 0.21 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NTH027N65S3FF155 NTH027N65S3F TO247 Tube N/A N/A 30 Units www.onsemi.com 2