SiHA15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Thin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) R x Q on g Low input capacitance (C ) iss Reduced switching and conduction losses G Ultra low gate charge (Q ) g Avalanche energy rated (UIS) Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 S D G N-Channel MOSFET APPLICATIONS Server and telecom power supplies PRODUCT SUMMARY Switch mode power supplies (SMPS) V (V) at T max. 700 DS J Power factor correction power supplies (PFC) R max. () at 25 C V = 10 V 0.28 DS(on) GS Lighting Q max. (nC) 96 g - High-intensity discharge (HID) Q (nC) 11 gs Q (nC) 21 - Fluorescent ballast lighting gd Configuration Single Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package Thin-Lead TO-220 FULLPAK Lead (Pb)-free and halogen-free SiHA15N65E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 650 DS V Gate-source voltage V 30 GS T = 25 C 15 C e Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 10 A C a Pulsed drain current I 38 DM Linear derating factor 0.27 W/C b Single pulse avalanche energy E 286 mJ AS Maximum power dissipation P 34 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dV/dt V/ns d Reverse diode dV/dt 23 c Soldering recommendations (peak temperature) For 10 s 300 C Mounting torque M3 screw 0.6 Nm Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 4.5 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 100 A/s, starting T = 25 C SD D J e. Limited by maximum junction temperature S17-0898-Rev. A, 12-Jun-17 Document Number: 91979 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiHA15N65E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) R -3.7 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 650 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.75 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 650 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 520 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 8 A - 0.23 0.28 DS(on) GS D Forward transconductance g V = 30 V, I = 8 A - 5.6 - S fs DS D Dynamic Input capacitance C 328 1640 2460 iss V = 0 V, GS Output capacitance C 16V = 100 V, 80120 oss DS f = 1 MHz Reverse transfer capacitance C 0.848 rss pF Effective output capacitance, energy C -63 - o(er) a related V = 0 V to 520 V, V = 0 V DS GS b Effective output capacitance, time related C -213 - o(tr) Total gate charge Q -48 96 g Gate-source charge Q -1V = 10 V I = 8 A, V = 520 V1- nC gs GS D DS Gate-drain charge Q -21- gd Turn-on delay time t -18 36 d(on) Rise time t -24 48 r V = 520 V, I = 8 A, DD D ns V = 10 V, R = 9.1 GS g Turn-off delay time t -4896 d(off) Fall time t -2550 f Gate input resistance R f = 1 MHz, open drain 0.2 0.6 1.2 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 15 S showing the A integral reverse G p - n junction diode Pulsed diode forward current I -- 38 SM S Diode forward voltage V T = 25 C, I = 8 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t -325 - ns rr T = 25 C, I = I , J F S = 8 A Reverse recovery charge Q -4.6 - C rr , V dI/dt = 100 A/s = 400 V R Reverse recovery current I -20 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S17-0898-Rev. A, 12-Jun-17 Document Number: 91979 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000