SiHA21N65EF www.vishay.com Vishay Siliconix E Series Power MOSFET with Fast Body Diode FEATURES D Fast body diode MOSFET using E series Thin-Lead TO-220 FULLPAK technology , Q , and I Reduced t rr rr RRM Low figure-of-merit (FOM) R x Q on g Low input capacitance (C ) iss G Low switching losses due to reduced Q rr Available Ultra low gate charge (Q ) g Avalanche energy rated (UIS) Material categorization: for definitions of compliance S S please see www.vishay.com/doc 99912 D G N-Channel MOSFET APPLICATIONS Telecommunications - Server and telecom power supplies PRODUCT SUMMARY Lighting - High-intensity discharge (HID) V (V) at T max. 700 DS J - Fluorescent ballast lighting R max. ( ) at 25 C V = 10 V 0.18 DS(on) GS Consumer and computing - ATX power supplies Q max. (nC) 106 g Industrial Q (nC) 14 gs - Welding - Battery chargers Q (nC) 33 gd Renewable energy Configuration Single - Solar (PV inverters) Switch mode power supplies (SMPS) Applications using the following topologies - LCC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge ORDERING INFORMATION Package Thin-Lead TO-220 FULLPAK Lead (Pb)-free SiHA21N65EF-E3 Lead (Pb)-free and halogen-free SiHA21N65EF-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 650 DS V Gate-source voltage V 30 GS T = 25 C 21 C e Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 13 A C a Pulsed drain current I 53 DM Linear derating factor 0.28 W/C b Single pulse avalanche energy E 367 mJ AS Maximum power dissipation P 35 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 37 J dV/dt V/ns d Reverse diode dV/dt 31 c Soldering recommendations (peak temperature) for 10 s 300 C Mounting torque M3 screw 0.6 Nm Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 5.1 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 100 A/s, starting T = 25 C SD D J e. Limited by maximum junction temperature S17-1308-Rev. D, 21-Aug-17 Document Number: 91772 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHA21N65EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) -3.6 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 650 - - V DS GS D V /T -0.67 - V temperature coefficient Reference to 25 C, I = 1 mA V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 520 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 520 V, V = 0 V, T = 125 C - - 500 DS GS J Drain-source on-state resistance R V = 10 V I = 11 A - 0.15 0.18 DS(on) GS D Forward transconductance g V = 30 V, I = 11 A - 7.0 - S fs DS D Dynamic Input capacitance C - 2322 - iss V = 0 V, GS Output capacitance C -V = 100 V, 105- oss DS f = 1 MHz Reverse transfer capacitance C -4- rss pF Effective output capacitance, energy C -84 - a o(er) related V = 0 V to 520 V, V = 0 V DS GS Effective output capacitance, time C - 293 - o(tr) b related Total gate charge Q -71 106 g Gate-source charge Q -1V = 10 V I = 11 A, V = 520 V4- nC gs GS D DS Gate-drain charge Q -33- gd Turn-on delay time t -22 44 d(on) Rise time t -34 68 r V = 520 V, I = 11 A, DD D ns V = 10 V, R = 9.1 Turn-off delay time t -6GS g 8102 d(off) Fall time t -4284 f Gate input resistance R f = 1 MHz, open drain - 0.78 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 21 S showing the A G integral reverse Pulsed diode forward current I -- 53 S SM p - n junction diode Diode forward voltage V T = 25 C, I = 11 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse recovery time t - 160 - ns rr T = 25 C, I = I = 11 A, J F S Reverse recovery charge Q -1.2 - C rr dI/dt = 100 A/s, V = 25 V R Reverse recovery current I -14 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S17-1308-Rev. D, 21-Aug-17 Document Number: 91772 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000